Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

Liu, Qi; Long, Shibing; Wang, Wei; Tanachutiwat, Sansiri; Li, Yingtao; Wang, Qin; Zhang, Manhong; Huo, Zongliang; Chen, Junning; Liu, Ming

doi:10.1109/led.2010.2070832

Cited by 47 publications

(51 citation statements)

References 13 publications

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“…À4 V) conditions, the abnormal unipolar RS exhibits a large ratio of R HRS /R LRS (> 10 4 at À0.1 V), which is beneficial to the multilevel storage application. 28 We suggest that the discrepancy of CF morphology after electroforming process should impact on the following switching characteristics. In our previous work, 22 we demonstrated that continuous Ag CFs (or discontinuous Ag nanocrystal chains) are formed between two electrodes after high (or low) I CC positive electroforming.…”

Section: Resultsmentioning

confidence: 86%

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun

Liu

Long

et al. 2014

Journal of Applied Physics

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Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices Appl. Phys. Lett. 101, 063501 (2012); 10.1063/1.4744950 Bipolar resistive switching performance of the nonvolatile memory cells based on ( AgI ) 0.2 ( Ag 2 MoO 4 ) 0.8 solid electrolyte filmsIn this paper, we report a multilevel unipolar resistive switching (RS) phenomenon with negative differential resistance (NDR) effect in Ag/SiO 2 /Pt sandwich structure. After positive electroforming process with low compliance current (I CC , 10 nA), a conductive filament consisting of isolated Ag nanocrystals is formed inside SiO 2 layer. Then, an abnormal unipolar resistive switching (RESET voltage is larger than SET voltage) with NDR effect is obtained under negative voltage sweep without I CC . Based on I-V fitting and temperature dependence of the resistance results, we suggest that the abnormal unipolar RS is dominated by the charging/discharging of carriers in Ag nanocrystals. In addition, we demonstrate that the unipolar RS exhibits good performances, including large R off /R on ratio, high uniformity, long retention time, and multilevel storage potential. V C 2014 AIP Publishing LLC. [http://dx.

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Section: Resultsmentioning

confidence: 86%

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun

Liu

Long

et al. 2014

Journal of Applied Physics

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“…This leads to the low and the high resistive states [5]- [8]. According to previous research [2], [5], [6], [9], [14], growth of the CFs are affected by the local electrical fields. Thus the adjustment of local electrical fields via the electrode structure should improve the resistive switching characteristics of the PMC memory.…”

Section: Introductionmentioning

confidence: 98%

High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode

Huang

Tsai

Chou

et al. 2013

IEEE Electron Device Lett.

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The pyramid structure fabricated with the potassium hydroxide (KOH) anisotropically etched (100) silicon substrate has been deposited with a copper film as the bottom electrode of the programmable metallization cell (PMC) memory to significantly improve the resistive switching characteristic. As compared with the conventional flat copper electrode, this pyramid-structured electrode exhibited the set/reset voltage as low as 1/0.6 V and superior endurance of 2400 cycles at the set/reset voltages of −5/+3 V for the voltages pulsewidth of 1 µs. The high performance of this PMC could be attributed to high local electrical fields at the tips of the pyramid structure, resulting in the formation of the narrower conductive filaments that facilitate the lower operation voltage and better endurance.Index Terms-Potassium hydroxide (KOH) surface texturing, programmable metallization cell (PMC), pyramid structure, resistive random-access memory (RRAM or ReRAM).

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“…Many solutions have been proposed to enhance the RRAM performances [6]- [9]. However, one of the essential criteria, the reliability of the TMO-based RRAM cells, has not been fully satisfied, such as endurance, retention, and read disturb [10].…”

Section: Introductionmentioning

confidence: 99%

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

Chen

Kang

Gao

et al. 2013

IEEE Electron Device Lett.

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In this letter, new endurance degradation behaviors in the bipolar resistive random access memory devices with multilayered HfOx/TiOx are reported for the first time, showing almost a constant resistance in low resistance state and a gradually reduced resistance in high resistance state (HRS). Further investigations into the dependence of HRSs degradation speed on switching voltage and temperature reveal that the degradation is attributed to the oxygen ion (O 2− ) loss effect during RESET process, which leads to the insufficient O 2− supply for recombining the oxygen vacancies. Possible technical solutions are then proposed to improve the endurance performance.Index Terms-Endurance, oxygen ion, oxygen vacancy, reliability, resistive random access memory (RRAM), resistive switching.

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Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

Cited by 47 publications

References 13 publications

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

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