Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies

Chang, Zhihua; Sansen, Willy

doi:10.1007/978-1-4757-2126-3

Cited by 174 publications

(79 citation statements)

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“…A well-known technique for approximating a delayed Gaussian waveform is to used a CR-(RC) n filter [17]. The Gaussian pulse can be approximated by a realizable CR-(RC) n quasi-Gaussian filter of Eq.…”

Section: The Pulse Generation Methodsmentioning

confidence: 99%

A fully integrated low power PAM multi-channel UWB transmitter

Chen

Anh

Yeo

et al. 2010

Analog Integr Circ Sig Process

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A new transmitter for ultra-wideband (UWB) impulse radio is described in this paper. The new UWB transmitter implements a low power Gaussian shaping filter to reduce the side-lobe in the frequency domain. A simple pulse amplitude modulation (PAM) circuit is used to keep the power consumption low. The proposed architecture features the simple design, low-power operation, and enables the pulse-shape generation for a multi-channel UWB. The core layout size is only 0.2 mm 2 . The simulation results show that the generated signals satisfy the FCC spectrum mask, and the average power consumption is \1.97 mW for the 1.8 V supply voltage. Pulses are transmitted at a PRF (pulse repetition frequency) of 40.5 MHz in 500 MHz bandwidth channels equally spaced within the 3.1-10.6 GHz UWB. This transmitter is designed and fabricated in a 0.18-lm CMOS process.

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Section: The Pulse Generation Methodsmentioning

confidence: 99%

A fully integrated low power PAM multi-channel UWB transmitter

Chen

Anh

Yeo

et al. 2010

Analog Integr Circ Sig Process

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“…The low supply voltage affects the signal headroom too, which is decreasing drastically. Further issues are the increase of 1/f-noise with smaller gate lengths and the dramatic decrease of the Early voltage (Chang, 1991). Another challenge is, that gate leakage and its mismatch are a serious problem in new technologies like 65 nm CMOS (Annema et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

A low-noise current preamplifier in 120 nm CMOS technology

2008

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Abstract. In this paper we examine the impact of deep submicron CMOS technology on analog circuit design with a special focus on the noise performance and the ability to design low-noise preamplifiers. To point out, why CMOS technology can grow to a key technology in low-noise and highspeed applications, various amplifier stages, applied in literature, are compared. One, that fits as a current preamplifier for low-noise applications, is the current mirror. Starting from the basic current mirror, an enhanced current preamplifier is developed, that offers low-noise and high-speed operation. The suggested chip is realized in 0.12 µm CMOS technology and needs a chip area of 100 µm×280µm. It consumes about 15 mW at a supply voltage of 1.5 V. The presented current preamplifier has a bandwidth of 750 MHz and a gain of 36 dB. The fields of application for current preamplifiers are, for instance, charge amplifiers, amplifiers for low-voltage differential signaling (LVDS) based point-to-point data links or preamplifiers for photodetectors.

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“…The analog part consists of a band gap, bias block, preamplifier [6,7], discriminator, analog buffer and LVDS driver [8,9] (figure 3). Two 8-bit DACs: one to adjust the threshold level of the comparator, and another to adjust the level of HV circuit are used.…”

Section: Analog Part Descriptionmentioning

confidence: 99%

ASIC design in the KM3NeT detector

Gajanana¹,

Gromov²,

Timmer³

2013

J. Inst.

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In the KM3NeT project [1], Cherenkov light from the muon interactions with transparent matter around the detector, is used to detect neutrinos. Photo multiplier tubes (PMT) used as photon sensor, are housed in a glass sphere (aka Optical Module) to detect single photons from the Cherenkov light. The PMT needs high operational voltage (∼ 1.5 kV) and is generated by a Cockroft-Walton (CW) multiplier circuit. The electronics required to control the PMT's and collect the signals is integrated in two ASIC's namely: 1) a front-end mixed signal ASIC (PROMiS) for the readout of the PMT and 2) an analog ASIC (CoCo) to generate pulses for charging the CW circuit and to control the feedback of the CW circuit. In this article, we discuss the two integrated circuits and test results of the complete setup. PROMiS amplifies the input charge, converts it to a pulse width and delivers the information via LVDS signals. These LVDS signals carry accurate information on the Time of arrival (< 2 ns) and Time over Threshold. A PROM block provides unique identification to the chip. The chip communicates with the control electronics via an I 2 C bus. This unique combination of the ASIC's results in a very cost and power efficient PMT base design.

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Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies

Cited by 174 publications

References 0 publications

A fully integrated low power PAM multi-channel UWB transmitter

A fully integrated low power PAM multi-channel UWB transmitter

A low-noise current preamplifier in 120 nm CMOS technology

ASIC design in the KM3NeT detector

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