Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

Deal, W.R.; Leong, K.M.K.H.; Radisic, V.; Sarkozy, S.; Gorospe, B.; Lee, J.; Liu, P. H.; Yoshida, W.; Zhou, Joe; Lange, M.; Lai, R.; Mei, X.B.

doi:10.1109/lmwc.2011.2143701

Cited by 94 publications

(25 citation statements)

References 7 publications

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“…front side of the circuit in CPW and multilayer microstrip designs. This is also the case for circuits that are using integrated dipole antennas as transitions [16], [17].…”

Section: Waveguide Transitionsmentioning

confidence: 96%

InP DHBT Amplifier Modules Operating Between 150–300 GHz Using Membrane Technology

Eriksson

Sobis

Gunnarsson

et al. 2015

IEEE Trans. Microwave Theory Techn.

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In this paper, we present WR05 (140-220 GHz) and WR03 (220-325 GHz) five-stage amplifier modules with novel membrane microstrip-to-waveguide transitions. The modules use a 250-nm InP double heterojunction bipolar transistor (DHBT) technology and multilayer thin-film microstrip transmission lines. The waveguide transitions use -plane probes on 3-m-thin GaAs membrane substrate. Beam lead connectors integrated on the transition eliminate the need of highly reactive bond wires. In addition, process steps such as backside metallization, backside vias, and nonrectangular dicing of the integrated circuits (ICs) are not required. The WR05 amplifier module demonstrates a peak gain of 24 dB at 245 GHz and more than 10-dB gain from 155 to 270 GHz. The WR-03 module has 19-dB gain from 230 to 254 GHz with input and output return loss better than 10 dB from 225 to 330 GHz. The two modules were also characterized in terms of noise. The minimum noise figures were measured to 9.7 dB at 195 GHz and 10.8 dB at 240 GHz for the WR05 and WR03 modules, respectively. To the authors' best knowledge, these are the first published results on an InP DHBT amplifier modules operating at these high frequencies. It is also the first time that membrane technology is used for IC packaging, regardless of IC technology.Index Terms-Amplifier, double heterojunction bipolar transistor (DHBT), indium phosphide (InP), membrane, multilayer, waveguide packaging, waveguide transition, WR05, WR03.

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“…front side of the circuit in CPW and multilayer microstrip designs. This is also the case for circuits that are using integrated dipole antennas as transitions [16], [17].…”

Section: Waveguide Transitionsmentioning

confidence: 96%

InP DHBT Amplifier Modules Operating Between 150–300 GHz Using Membrane Technology

Eriksson

Sobis

Gunnarsson

et al. 2015

IEEE Trans. Microwave Theory Techn.

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“…The even-mode forward gain is ignored in the analysis as it is generally negligible compared to the differential gain . Therefore, only three S-parameters, , , and , normalized to the odd-mode impedances of and , are considered in the MAG analysis without loss of generality (1) where is the odd-mode MAG for the unit-cell chain. The MAG equation for the complete amplifier can be readily obtained from above three parameters as well as and (2) 1531-1309/$31.00 © 2012 IEEE …”

Section: Unbalanced Feed Amplifier Theorymentioning

confidence: 99%

“…The highest operation frequency up to date of 0.67 THz is achieved from a single-ended CPW transmission-line amplifier that uses 30 nm InP high electron mobility transistors (HEMT) to deliver a small signal gain of 30 dB [1]. Amplifiers using InP HBT technology is not far behind as 325 GHz gain of 25 dB is demonstrated recently [2].…”

Section: Introductionmentioning

confidence: 99%

400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks

Hacker

Urteaga

Lin

et al. 2012

IEEE Microw. Wireless Compon. Lett.

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A terahertz differential eight-stage amplifier fabricated using state-of-the-art 125 nm double-heterojunction bipolar transistors (DHBT) is presented. The four-port unit-cell chain is designed for optimum forward differential gain with no even and odd-mode reverse gains. Unbalanced single-ended feed networks are added to preserve the amplifier gain without inducing oscillations. The proposed feed scheme is validated by a stable amplifier operation in 325-to-450 GHz range with the peak gain of 22 dB at 375 GHz.

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“…Amplification has now been reported as high as 670 GHz [3] using a 30 nm InP HEMT transistor (Fig. 1).…”

Section: Introductionmentioning

confidence: 98%

InP HEMT integrated circuits for Submillimeter Wave radiometers in earth remote sensing

Deal

Chattopadhyay

2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

Cited by 94 publications

References 7 publications

InP DHBT Amplifier Modules Operating Between 150–300 GHz Using Membrane Technology

InP DHBT Amplifier Modules Operating Between 150–300 GHz Using Membrane Technology

400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks

InP HEMT integrated circuits for Submillimeter Wave radiometers in earth remote sensing

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