400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks

Hacker, J.B.; Urteaga, M.; Lin, Robert; Skalare, A.; Mehdi, Imran; Rieh, Jae-Sung; Kim, M.

doi:10.1109/lmwc.2012.2214767

Cited by 14 publications

(4 citation statements)

References 4 publications

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“…Cascade WR-3.4 RF probe custom-made WR-1.5-to-10 transition, 18 mm GGB WR-1. 5 RF probe multiplier IC Fig. 3 On-wafer frequency multiplier test setup…”

Section: Erickson Pm4 Calorimetermentioning

confidence: 99%

“…The original nonlinear model for the 250 nm HBT, extracted by extrapolating a set of S ‐parameters from DC‐to‐110 GHz measurements under various bias conditions, has not been fully validated to correctly estimate the nonlinear behaviour above 300 GHz. In past HBT circuit designs, it was often necessary to add a significant amount of parasitic base inductance to match simulation results to the measured data [5]. The original model predicts a positive maximum available gain (MAG) up to 700 GHz when the HBT is under class‐A DC‐bias condition.…”

Section: Frequency Selectionmentioning

confidence: 99%

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600 GHz InP HBT frequency multiplier

2015

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A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 μm InP HBT (heterojunction bipolar technology) technology is reported. The multiplier uses two 6 μm finger devices in commonbase push-push configuration to obtain extremely simple matching networks. Measurements using on-wafer RF probes indicate maximum output power of −8.3 dBm at 590 GHz with a wide operation bandwidth of better than 50 GHz.

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“…Cascade WR-3.4 RF probe custom-made WR-1.5-to-10 transition, 18 mm GGB WR-1. 5 RF probe multiplier IC Fig. 3 On-wafer frequency multiplier test setup…”

Section: Erickson Pm4 Calorimetermentioning

confidence: 99%

Section: Frequency Selectionmentioning

confidence: 99%

600 GHz InP HBT frequency multiplier

2015

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“…The interstage circuit schematic drawn in the inset of Fig. 2 a is similar to the previous differential amplifier design for 400 GHz [6]. In each amplifier stage, two DHBT devices form a differential‐pair in common‐base configuration while the transmission‐line lengths are adjusted to shift the gain peak to near 300 GHz.…”

Section: Variable Gain Amplifiermentioning

confidence: 99%

300 GHz vector‐sum phase shifter using InP DHBT amplifiers

Yu¹,

Lee²,

Kim³

2013

Electron. lett.

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A vector-sum phase shifter that provides 90°phase control with a positive signal gain is successfully demonstrated at WR-3 band. The integrated circuit consists of input and output microstrip power dividers and two InP DHBT amplifiers with a 300 GHz gain of 14.8 dB. The measurements on a fabricated phase shifter show offset phases of − 46°, − 22°, 0°, 25°, 57°and signal gain of 7.7 to 10.1 dB at 300 GHz.

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“…Higher Frequency Balun Probe In the last few years, there have been quite a few differential amplifiers reported with working frequencies beyond 100GHz [59,60,61]. A balun integrated probe that could provide convenient on-wafer characterization for differential devices is thus highly desirable.…”

Section: Future Workmentioning

confidence: 99%

Development of Single-Ended and Balun Integrated Probes for THz Applications

Zhang

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To my families, who have always supported and encouraged me. AbstractA number of new devices and components are being developed in the terahertz spectrum for applications such as radio astronomy, medical and surveillance imaging.However, these development efforts are hampered by difficulties in the characterization processes. Typically, terahertz modules fabricated on semiconductor material need to be diced into individual chips, and assembled to a precision micromachined block for test. This time-consuming and arduous characterization process adds to the complexity and cost. The on-wafer probe solves these problems by providing a tool to characterize the terahertz DUT on-wafer, in large volumes and with higher precision.In this dissertation, a new fabrication technology is first developed to fabricate a single-ended probe with GSG probe tips. The improved fabrication processes have been used to realize on-wafer probes up to 1.1 THz, which is the first reported THz probe in the community. Further tests on these probes demonstrate that they can maintain electrical repeatability over long term usage.In the second part of this work, a prototype balun integrated probe at W-band is developed to enable on-wafer characterization for differential circuits. Detailed design considerations, as well as test results, are shown in this work. Just as with the GSG probes, the GSGSG design has the potential to be scaled to higher frequencies. The balun integrated probe can be used to provide a convenient way to characterize the emerging differential MMIC devices with better accuracy and lower cost. 1

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400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks

Cited by 14 publications

References 4 publications

600 GHz InP HBT frequency multiplier

600 GHz InP HBT frequency multiplier

300 GHz vector‐sum phase shifter using InP DHBT amplifiers

Development of Single-Ended and Balun Integrated Probes for THz Applications

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