Low-loss germanium strip waveguides on silicon for the mid-infrared

Chang, Yu‐Chi; Paeder, Vincent; Hvozdara, L.; Hartmann, Jean‐Michel; Herzig, Hans Peter

doi:10.1364/ol.37.002883

Cited by 160 publications

(103 citation statements)

References 21 publications

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“…One strategy involves replacing the lossy silicon oxide cladding with other materials exemplified by silicon-on-nitride ( Figure 3A-B) [10] and germanium-on-nitride [17] or with air cladding in pedestal [11,18,19] or suspended silicon structures [12][13][14][20][21][22][23] (Figure 3C-H). Another option is Ge-on-Si (or SiGeon-Si), which claims the advantage of compatibility with Si CMOS processing, as high-quality Ge can be epitaxially grown on Si ( Figure 3I-J) [15,17,[24][25][26][27][28]. Furthermore, the high index of Ge means that the Si substrate can function as the bottom cladding.…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…Towards mid-IR applications, different types of Group IV waveguides have been reported recently, based on silicon-on-insulator (SOI) [191][192][193], silicon-on-sapphire [142,194,195], silicon-on-porous-silicon [192], siliconon-nitride [196,197], suspended membrane silicon [198], silicon pedestal [199], and germanium-on-silicon [200]. Most of the waveguides are not aimed specifically at nonlinear applications, and little attention has been paid to dispersion engineering [196].…”

Section: Devicesmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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“…Ge-on-Si were first reported by Chang et al [197]. Reduced-pressure chemical vapor deposition was employed to grow a 2-μm thick monocrystalline Ge relaxed layer on a Si and ∼3-μm-wide stripes were fabricated by photolithography.…”

Section: Mid-infrared Integrated Photonic Platformsmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Low-loss germanium strip waveguides on silicon for the mid-infrared

Cited by 160 publications

References 21 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Emerging heterogeneous integrated photonic platforms on silicon

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