Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery

Mounib, A.; Balestra, F.; Mathieu, N.; Brini, J.; Ghibaudo, G.; Chovet, A.; Chantre, A.; Nouailhat, A.

doi:10.1109/16.405279

Cited by 32 publications

(12 citation statements)

References 9 publications

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“…͑4͒ characterizes the entire set of data obtained for the transistors listed in Table I, and the value of A f was found to be very close to two, in agreement with other studies. 9,12,19 In order to determine the effect of variations in transistor dimensions on noise, we determined K f on a batch of 40 devices, having 12 different dimensions, at 13 different base current values. In order to do so, we fixed A f at a value of 2 and then the values of K f parameter were established from Eq.…”

Section: Resultsmentioning

confidence: 99%

“…However the QSA-BJTs studied in this work should have no, or very little, of the interfacial SiO 2 , as an HF cleaning step was involved in their fabrication, prior to polysilicon deposition. Second, former studies on noise generation in BJTs and the hot electron-induced degradation 2,11,16,19 have been well accounted for by a model assuming the noise sources localization on the transistor periphery, in the vicinity of the depletion zone of the E/B junction. This, however, implies the 1/P E scaling rule, contrary to our present findings.…”

Section: Discussionmentioning

confidence: 99%

“…The first has been discussed in the literature and is more frequently used, 9,12,18 the second has been only briefly mentioned in Ref. 19. It seems, however, useful to discuss the FIG.…”

Section: A Instrumentationmentioning

confidence: 97%

“…When A f is close to unity, the LF noise is assumed to result from the Hooge mobility fluctuations, whereas when A f is close to two, the carrier number fluctuations are involved. 7,19 The dependence of S Ib on current intensity and frequency is usually expressed by the equation,…”

Section: B Experimental Proceduresmentioning

confidence: 99%

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Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Llinares¹,

Céli²,

Roux-dit-Buisson³

et al. 1997

Journal of Applied Physics

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

“…The first has been discussed in the literature and is more frequently used, 9,12,18 the second has been only briefly mentioned in Ref. 19. It seems, however, useful to discuss the FIG.…”

Section: A Instrumentationmentioning

confidence: 97%

Section: B Experimental Proceduresmentioning

confidence: 99%

See 2 more Smart Citations

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Llinares¹,

Céli²,

Roux-dit-Buisson³

et al. 1997

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] The stress causes the increase both in the density of Si/SiO 2 interface states and trapped oxide charge on the border states, 14 which results in an increase in the base leakage current and the low frequency noise ͑LFN͒. An 1/f -like power spectrum is usually found in stressed large emitterarea devices, 2,5,10,13 while a random telegraph signal ͑RTS͒ can be observed in sufficiently small devices.…”

Section: Random Telegraph Signal Noise Mechanisms In Reverse Base Curmentioning

confidence: 99%

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Pogány

Chroboczek

Ghibaudo³

2001

Journal of Applied Physics

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Articles you may be interested inPhysical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor field-effect transistorsWe investigate physical mechanisms of random telegraph signal ͑RTS͒ noise in reverse base current of hot carrier-degraded polysilicon emitter bipolar junction transistors. RTS noise, analyzed in the time domain, is studied as a function of reverse base-emitter bias, temperature, and additional reverse-bias stress. Two-level RTS with a relative amplitude as high as 100% is observed at room temperature. The RTS amplitude varies exponentially with the applied reverse base-emitter voltage and depends weakly on temperature. The additional hot carrier stress is observed to induce changes in RTS amplitude and mean pulse widths ͑independent or correlated͒, and a disappearance/ reappearance of the RTS fluctuations. The results are interpreted by a model where the RTS noise is caused by fluctuations of generation-recombination (g-r) parameters ͑i.e., capture cross sections and energy position in the gap͒ of a stress-induced complex bistable defect ͑CBD͒ at the Si/SiO 2 interface. The complex defect is assumed to be either a two-state fast interface state or an interacting pair of a fast interface state with a slow neighboring border trap. The RTS amplitude is well explained by fluctuations in a single-defect electric-field-enhanced g-r rate between a finite value and naught. The RTS amplitude-bias characteristics and their temperature dependence are satisfactorily accounted for by an expression for a phonon-assisted tunneling current via a single deep-level state. The model parameters are the g-r parameters of the defect and its spatial position in the base-emitter p -n junction. The stress-induced changes in the RTS noise are attributed to the influence of log-time trapping of hot carriers on border states laying in the vicinity of a CBD center. The charged border traps interact with a CBD, changing both its g-r parameters and the RTS switching behavior. The variations in RTS parameters are related to the microscopic nature of the interaction and are discussed for the two types of the CBDs.

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Process Integration

Reisch

2003

High-Frequency Bipolar Transistors

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Low-frequency noise sources in polysilicon emitter BJT's: influence of hot-electron-induced degradation and post-stress recovery

Cited by 32 publications

References 9 publications

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Process Integration

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