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The angular emission pattern of a random laser is typically very irregular and difficult to tune. Here we show by detailed numerical calculations that one can overcome the lack of control over this emission pattern by actively shaping the spatial pump distribution. We demonstrate, in particular, how to obtain customized pump profiles to achieve highly directional emission. Going beyond the regime of strongly scattering media where localized modes with a given directionality can simply be selected by the pump, we present an optimization-based approach which shapes extended lasing modes in the weakly scattering regime according to any predetermined emission pattern.

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The authors investigate 2μm gate-length InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a gate leakage reduction by six to ten orders of magnitude. A maximal drain current density (IDS=0.9A∕mm) and an extrinsic transconductance (gme=115mS∕mm) of the MOS HEMT also show improvements despite the threshold voltage shift. An analytical modeling shows that a higher mobility of electrons in the channel of the MOS HEMT and consequently a higher number of electrons attaining the velocity saturation may explain the observed increase in gme after the gate insulation.