Low-frequency noise in thick-film structures caused by traps in glass barriers

Screen-Printing of Conductive Nanomaterial Inks for Stretchable Electronics

“…Conductive nanomaterial inks consist of conductive filler immersed in stretchable polymer matrix, usually polyvinyl pyrrolidone (PVP), polyvinyl alcohol (PVA)/polyvinyl pyrrolidone (PVP) blend or polydimethylsiloxane (PDMA) [7][8][9]. Conductivity of these conductive nanomaterial-polymer composites can be analyzed and predicted using the percolation theory that describes connectivity between randomly distributed conducting particles in an insulating medium [11][12]. Low conductive filler contents sufficient to form percolation networks are desirable because they minimize deterioration of the polymer matrix properties.…”

Thick‐Film Resistor Failure Analysis Based on Low‐Frequency Noise Measurements

“…In that case, the relative voltage noise spectrum due to the presence of traps in glass barriers is given by the following expression [6,7]:…”

“…, N T ¼ 6.9 Â 10 9 and R ¼ 100 kΩ [6]. 1/f noise and noise due to the presence of traps in glass barriers are included along with two Lorentzian terms ( f C1 ¼ 115 Hz and f C2 ¼ 1.1 kHz).…”

Low‐Frequency Noise and Resistance as Reliability Indicators of Mechanically and Electrically Strained Thick‐Film Resistors

“…Experimentally obtained results for relative resistance, gauge factor changes (a) and noise index (b) for thick resistive films subjected to simultaneous impact of mechanical and electrical straining along with summary plot of relative resistance change (c) for electrically (1) and simultaneously mechanically and electrically strained (2) 10 kΩ/sq thick-film resistors (A-10 pulses per series, B-single pulses, resistor width: w = 1 mm, length: l = 4 mm) [16]. Sources of low-frequency noise in thick resistive films are correlated to charge transport mechanisms [11]; metallic conduction is correlated to resistance fluctuations of contact resistivity and particle resistivity and tunnelling through glass barriers is correlated to noise due to modulation of the Nyquist noise and fluctuations induced by existence of traps in insulating layers of MIM units. Figure 11 shows experimental results for current noise spectrum before and after simultaneous electrical and mechanical straining of thick resistive films whose experimental results for relative resistance, gauge factor and noise index changes are given in Figure 9 [16].…”

“…Little attention has particularly been paid to examining effects of the simultaneous impact of these two types of straining with respect to their contrasting effects on resistor performances. In addition, standard low-frequency noise measurements [10][11][12][13] are being recognized as useful tools in reliability analysis of thick-film resistors subjected to various straining conditions. For these reasons, this chapter focuses on performance analysis of mechanically, electrically and simultaneously mechanically and electrically strained thick-film resistors based on compositions with three different volume fractions of conducting phase, using standard resistance and low-frequency noise measurements as valuable indicators in reliability evaluation of thick resistive structures under a wide range of extreme working conditions.…”