Thick‐Film Resistor Failure Analysis Based on Low‐Frequency Noise Measurements

Abstract

The chapter aims to present research results in the field of thick-film resistor failure analysis based on standard resistance and low-frequency noise measurements. Noise spectroscopy-based analysis establishes correlation between noise parameters and parameters of noise sources in these heterogeneous nanostructures. Validity of the presented model is verified experimentally for resistors operating under extreme working conditions. For the experimental purposes, thick-film resistors of different sheet resistances and geometries, realized using commercially available thick-film resistor compositions, were subjected to high-voltage pulse (HVP) stressing. The obtained experimental results are qualitatively analysed from microstructure, charge transport mechanism and low-frequency noise aspects. Correlation between resistance and lowfrequency noise changes with resistor degradation and failure due to high-voltage pulse stressing is observed.