Low-Frequency Noise In Advanced Mos Devices

Haartman, Martin von; Östling, Mikael

doi:10.1007/978-1-4020-5910-0

Cited by 224 publications

(191 citation statements)

References 75 publications

Supporting

Mentioning

163

Contrasting

Unclassified

Order By: Relevance

“…32,34 The CNF model suggests that current fluctuations arise from the change in the charge carrier density due to the charge trapping/detrapping phenomena at the trap sites near the channelÀinsulator interface. The HMF model describes that the change in the carrier mobility resulting from the variation of the scattering cross section induced current fluctuations.…”

Section: Articlementioning

confidence: 99%

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

et al. 2014

View full text Add to dashboard Cite

We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values D(it) and N(it), extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra.

show abstract

Section: Articlementioning

confidence: 99%

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

et al. 2014

View full text Add to dashboard Cite

show abstract

“…(4), where s l and s h refer to the low and high current level time constants [13]. Note that the RTN trend appears with a slope of a $ 2, which is called Lorentzian spectrum.…”

Section: Background Of Low Frequency Noise Spectramentioning

confidence: 98%

“…Thermal noise (S TH ) is due to the agitation of charge carriers in the device and is independent of the applied voltage [13]. It always exists but in general, has a very low magnitude determining the base level of the noise for any device/system.…”

Section: Background Of Low Frequency Noise Spectramentioning

confidence: 99%

“…Shot noise (S S ) is caused by the discrete motion of electrons through the device causing random fluctuation of the current in the DC case [13]. The expression for S S can be given by Eq.…”

Section: Background Of Low Frequency Noise Spectramentioning

confidence: 99%

“…Integrating the RTN spectrum with a continuous uniform distribution of s, the resulting spectral density expression will have a structural form as shown in Eq. (5)[13], where K is a proportionality constant and {s 1 , s 2 } are the minimum and maximum time constants and include the (a) Retention loss trends for many devices in the LRS state for metal filament based switching at high I comp . Insets show final noise behavior after abrupt jump in the current.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory

Raghavan

Frey

Pey

2014

Microelectronics Reliability

View full text Add to dashboard Cite

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS₂ Transistor

Lee

Choi

Kaczer

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h‐BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h‐BN dual‐gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time‐dependent current, and low‐frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y‐function method as a function of constant top gate bias.

show abstract

Low-Frequency Noise In Advanced Mos Devices

Abstract: by A C.I.P. Catalogue record for this book is available from the Library of Congress.ISBN 978-1-4020-5909-4 (HB) ISBN 978-1-4020-5910-0 (e-book)Published by Springer,

Cited by 224 publications

References 75 publications

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS₂ Transistor

Contact Info

Product

Resources

About

Low-Frequency Noise In Advanced Mos Devices

Abstract: by A C.I.P. Catalogue record for this book is available from the Library of Congress.ISBN 978-1-4020-5909-4 (HB) ISBN 978-1-4020-5910-0 (e-book)Published by Springer,

Cited by 224 publications

References 75 publications

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation

Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor

Contact Info

Product

Resources

About

Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS₂ Transistor