Low frequency noise degradation in ultra-thin oxide (15A/spl deg) analog n-MOSFETs resulting from valence-band tunneling

Wu, Jyh‐Horng; You, Jiun-Der; Ma, H.C.; Cheng, Chih‐Chia; Hsu, Chih‐Yu; Huang, Guo Wei; Chang, Chih-Hsien; Wang, Tahui

doi:10.1109/relphy.2005.1493095

Cited by 4 publications

(3 citation statements)

References 9 publications

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“…Recently, a study for ultrathin gate oxide fully depleted/partially depleted silicon-on-insulator (SOI) MOSFETs has shown that linear kink effect induced by valence-band electron tunneling would increase the low-frequency noise spectral density [8]. In this paper, we observe another source of low-frequency noise in ultrathin gate oxide bulk n-MOSFETs arising from valence-band electron tunneling [9], [10]. Detailed discussion on the physical mechanism of this excess noise will be given.…”

Section: Introductionmentioning

confidence: 79%

Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

You

et al. 2005

IEEE Trans. Electron Devices

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Low-frequency flicker noise in analog n-MOSFETs with 15-A gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.

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Section: Introductionmentioning

confidence: 79%

Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

You

et al. 2005

IEEE Trans. Electron Devices

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“…10 shows that the level of the plateau corresponding to the 1/f noise increases at V GF P 1 V where the LKE Lorentzians are observed and, hence, the EVB tunneling current is flowing. Such an increase can be explained by the fact that the EVB tunneling current provokes recombination processes at oxide and interface traps and these processes are the source of the additional 1/f noise [18,19].…”

Section: Additional Noise Effects Induced By An Accumulation Backgatementioning

confidence: 99%

Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates

Lukyanchikova

Garbar

Kudina

et al. 2009

Solid-State Electronics

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“…Low frequency noise has become one of the major issues for analog/mixed signal and radio frequency (RF) circuits [1][2][3][4]. This is mainly due to the improvement of device performance by the continuous scaling down of the gate length of the metal oxide semiconductor field effect transistors (MOSFETs).…”

Section: Introductionmentioning

confidence: 99%

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

Kwon¹,

Kwon²,

Kwak³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, S ID /I D 2 showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of S ID /I D 2 on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

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Low frequency noise degradation in ultra-thin oxide (15A/spl deg) analog n-MOSFETs resulting from valence-band tunneling

Cited by 4 publications

References 9 publications

Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling

Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

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