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Low-frequency flicker noise in analog n-MOSFETs with 15-A gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.

Articles you may be interested inLow-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors Appl. Phys. Lett. 86, 082102 (2005); 10.1063/1.1866507 Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 94, 4461 (2003); 10.1063/1.1604452Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.Origin of microwave noise from an n-channel metal-oxide-semiconductor field effect transistor Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-μm metal-oxide-semiconductor field-effect transistors

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The main contain of this article specifically for audio directional system is hit by digital power amplifier, and to the rear for digital power amplifier stage full-bridge circuit simulation test.It proposes the question of the full-bridge circuit which you must pay attention to in the design process, and the article brings forward the method that improves specifically for these problems.The audio directional system works in the high frequency state, this audio directional system's operating frequency is 30khz, if you choose the transistor's switching speed is lower than the targeted audio system's operating frequency, then would it have the serious distortion.Therefore, the process of the selection of transistors must consider all aspects of the requirements. The switching valves according to pre-control strategy manages the opening sequence and turn-off, ultimately the AC power supply voltage transforms into DC power supply voltage.the multisim has the direct-viewing capture and the function of formidable simulation, it can easily change the simulation's parameters and access to a variety of visual simulation results.carrying on the comparison to the result of the simulation test, which has the nimble feasibility. It is the flexibility of using multisim, You can design a good circuit after carrying on pre-test in transformation effect and the higher harmonic to filter out aspects and so on.Index Terms-Multisim. The Full-Bridge. Simulation. Audio Directional System

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