Low-Frequency Noise Assessment of CMOS Transistors with a Through-Silicon Via

Abstract

Low-frequency (LF) noise has been used to study the impact of a nearby copper through-silicon via (TSV) on the gate oxide quality of p- and n-channel MOSFETs. It is shown that the spectra in all cases studied are governed by 1/f-like noise, associated with trapping of carriers in the gate dielectric. While the impact of the TSV on the noise magnitude and behavior of n-channel transistors is marginal, some increase of the spectral density can be found for the pMOSFETs, although there is no systematic trend with distance. This is discussed in terms of the impact of strain on the LF noise.

(Invited) Low Frequency Noise Performance of State-of-the-Art and Emerging CMOS Devices

“…Because Cu is involved, the potential effect of a nearby TSV on the integrity of the transistors and circuits is an important concern. Therefore, LF noise studies of CMOS transistors in proximity of a Cu TSV at different distances have been performed (73). While there is little effect on the noise spectral density for n-channel devices, some increase in weak inversion for the pMOSFETs is observed.…”

“…Input-referred voltage noise spectral density versus gate voltage for four 10x0.7 Pm 2 pMOSFETs with a TSV at the indicated distances, in linear operation (V DS =-0.05 V) and at a frequency f=25 Hz. The device with 'no' indicates no TSV in the same array(73).…”