Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMS

Grehl, Thomas; Möllers, R.; Niehuis, E.

doi:10.1016/s0169-4332(02)00653-0

Cited by 37 publications

(20 citation statements)

References 2 publications

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“…Because of its simple design however, the R parameters could not be compared directly for Bi 1 + and Bi 3 + due to the large differences in the target currents and sputter yields of the two beams. In dual beam depth profiling of inorganic samples, for example, the R parameter took into account the sputter ratios of the analysis and etching beams 3. Similarly, this manuscript will attempt to correct for the differences in target currents by introducing a modified normalization scheme, the R ′ parameter that will take into account the sputter ratio of the two beams: where Y is the sputter yield of the respective primary ion beam, measured in atoms sputtered per incident ion.…”

Section: Resultsmentioning

confidence: 99%

ToF‐SIMS depth profiling of trehalose: the effect of analysis beam dose on the quality of depth profiles

Muramoto

Brison

Castner

2011

Surface & Interface Analysis

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In static secondary ion mass spectrometry (SIMS) experiments, an analysis dose of 1012 ions/cm2 typically produces optimum results. However, the same dose used in dual beam depth profiling can significantly degrade the signal. This is because during each analysis cycle a high-energy beam is rastered across the same x-y location on the sample. If a sufficient amount of sample is not removed during each sputter cycle, the subsequent analysis cycle will sample a volume degraded by the previous analysis cycles. The dimensionless parameter R’ is used to relate the amount of damage accumulated in the sample to the amount of analysis beam dose used relative to the etching beam. Depth profiles from trehalose films spin-cast onto silicon wafers acquired using Bi1+ and Bi3+ analysis beams were compared. As R’ increased, the depth profile and the depth resolution (interface width) both degraded. At R’ values below 0.04 for both Bi1+ and Bi3+, the shape of the profile as well as the depth resolution (9 nm) indicated that dual beam analysis can be superior to C60 single beam depth profiling.

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Section: Resultsmentioning

confidence: 99%

ToF‐SIMS depth profiling of trehalose: the effect of analysis beam dose on the quality of depth profiles

Muramoto

Brison

Castner

2011

Surface & Interface Analysis

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“…This means that the analysis beam erodes less than 0.4% of the sample material being sputtered. Presently, the value of the sputter rate ratio in the range of a few hundred up to a thousand is typical for the most part of depth profiling using modern TOF‐SIMS instrumentation . The intensities of the Al signal in depth profiles were recalculated into bulk concentration using the relative sensitivity factor (RSF) for Al in Si and Al in SiC…”

Section: Methodsmentioning

confidence: 99%

Small Al cluster ion implantation into Si and 4H‐SiC

Zeng

Pelenovich

Ieshkin

et al. 2019

Rapid Comm Mass Spectrometry

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Rationale Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current. Methods In this study to carry out low‐energy implantation into single crystalline silicon and 4H‐SiC samples we employ Aln− (n = 1–5) clusters with energy in the range of 5–20 keV. The Al clusters are obtained by Cs sputtering of Al rod. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS; IONTOF TOF.SIMS‐5) is used to study aluminum and oxygen sputter depth profiles for different cluster sizes and implantation energies before and after annealing treatment. Results A distinguishable effect of the energy per atom in the cluster on reduction of the projected range Rp is revealed. The lowest Rp of 3 ± 1 nm has been achieved in SiC samples at the energy per atom of 1.66 keV. After annealing of Si samples, a considerable change in the Al profiles due to redistribution of Al atoms during motion of the front of recrystallization is observed. The influence of the number of atoms in the cluster at the same energy per atom within the experimental uncertainty is not observed. Conclusions The transient effects of the sputtering by the primary ion beam distort the shape of the Al profiles in Si samples. In the case of SiC, due to its relatively lower surface chemical activity, more informative TOF‐SIMS depth profiling of the shallow cluster implantation is feasible.

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“…Time-of-flight secondary ion mass spectrometer TOF.SIMS-5 works in the dual beam mode [11] using 25 keV Bi + or Bi 3 + ions for analysis and 1 keV Cs + ions for sputtering. The angle of incidence was 45°for all ion beams.…”

Section: Instrumentsmentioning

confidence: 99%

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

et al. 2013

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Low energy dual beam depth profiling: influence of sputter and analysis beam parameters on profile performance using TOF-SIMS

Cited by 37 publications

References 2 publications

ToF‐SIMS depth profiling of trehalose: the effect of analysis beam dose on the quality of depth profiles

ToF‐SIMS depth profiling of trehalose: the effect of analysis beam dose on the quality of depth profiles

Small Al cluster ion implantation into Si and 4H‐SiC

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

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