Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Ber, B.Ja.; Bábor, Petr; Brunkov, P. N.; Chapon, Patrick; Дроздов, М. Н.; Duda, Radek; Kazantsev, D. Yu.; Полковников, В. Н.; Yunin, P. A.; Tolstogouzov, A.

doi:10.1016/j.tsf.2013.05.154

Cited by 25 publications

(12 citation statements)

References 39 publications

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“…2b). In this regime molecular ions Bi 3 + were employed for analysis instead of atomic Bi + since such combinations provided better depth resolution of multilayer mirrors [15,16]. Along with layers' elements mentioned above, the profiles of Si + ions originated from substrate material are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Such an approach was used in our previous study related to the sputter depth profiling of multilayer Mo/Si (Mo/B 4 C/Si) mirrors [16] and CrN/ AlN coatings [18,19]. For all complete depth profiles shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…La/B 4 C multilayers possess highest R 0~7 0% for near-normal incidence of radiation Thin Solid Films 577 (2015) [11][12][13][14][15][16] in the wavelength range of 6.7-8.5 nm. However, a strong chemical interaction between La and B provokes the formation of boron-lanthanum compounds in interface regions.…”

Section: Introductionmentioning

confidence: 99%

“…and matrix (ionization) effects may considerably distort the actual depth distributions [14]. An influence of these and other artifacts, mainly, ioninduced surface roughness, on sputter depth profiling of Mo/Si and Mo/B 4 C/Si multilayers was investigated in our previous works [15,16]. Basing on these results, we developed experimental approach (for details, see the Experimental details section) which has allowed us to reveal fine structures of La/B 4 C multilayer mirrors with a period of ca.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

et al. 2015

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

et al. 2015

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“…This kind of methodology has been already used successfully for the study of nanometer periodic multilayers designed for x--ray optics, see Refs. [2][3][4][5][6] for example.…”

Section: Introductionmentioning

confidence: 99%

Study of the Au‐Cr bilayer system using X‐ray reflectivity, GDOES, and ToF‐SIMS

Jonnard

Modi

Guen

et al. 2018

Surface & Interface Analysis

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We study a Au (25 nm)/Cr (10 nm) bilayer system as a model of mirror for the soft x-ray energy range. The Au and Cr thin films are a few nanometers thick and are deposited on a float glass substrate. The sample is characterized using three complementary techniques: soft x-ray reflectivity (XRR), glow discharge optical emission spectrometry (GDOES) and time of flight secondary ion mass spectroscopy (ToF-SIMS). XRR provides information about the thickness and roughness of the different layers while GDOES is used to obtain the elemental depth profile of the stack and ToF-SIMS to obtain the elemental and chemical depth profile. GDOES and ToF-SIMS have both a nanometer depth resolution. A coherent description of the bilayer stack is obtained through the combination of these techniques. It consists in five layers namely a surface contamination layer, a principal gold layer, a Au-Cr mixed layer, a Cr layer and another contamination layer at the top of the substrate.

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Novel microwave plasma-assisted CVD reactor for diamond delta doping

Vikharev

Горбачев

Lobaev

et al. 2016

Phys. Status Solidi RRL

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We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

show abstract

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Cited by 25 publications

References 39 publications

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

Study of the Au‐Cr bilayer system using X‐ray reflectivity, GDOES, and ToF‐SIMS

Novel microwave plasma-assisted CVD reactor for diamond delta doping

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