Low-dislocation-density 4" 0 Ø GaAs single crystal growth under arsenic atmosphere

Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

“…It can be shown that there are some principial advantages of VCZ crystals, i) the perfect shiny surface (TATSUMI et al 1994;KAWASE et al 1992; KAWARABAYASHI, see also Fig. 6) leading to a low dislocation density at the crystal periphery and, therefore, ii) to a higher radial homogeneity, iii) decrease of the dislocation density within the crystal compared to the conventional LEC ingots by of about one order of magnitude and, iv) a markedly higher cell dimension of the subgrain structure compared with ordinary GaAs Czochralski crystals.…”