Vapour pressure controlled Czochralski (VCZ) growth — a method to produce electronic materials with low dislocation density

Progress in the melt growth of III–V compounds

“…A version of this VCz technology has been developed and reported by Rudolph et al [3,29]. A diagram of their apparatus is shown in Fig.…”

Innovation in crystal growth: A personal perspective

“…The problem stimulated the use of a controlled vapour pressure of the group V above the pulled crystal in a novel innovation called vapour controlled Czochralski (VCz). It was initiated for InP by Azuma [15] and for GaAs by Rudolph et al [16].…”

A Review of the Automation of the Czochralski Crystal Growth Process

“…Nowadays, diameter control has been developed for a variety of dierent materials and system congurations, where many complex problems have been identied such as materials with hard to control conditions that resulted either in high dislocation densities or large growth and shape variations, as well as the challenges in scale up of the process for larger crystal sizes [8,11,1722]. Other (181) examples are the use of a liquid encapsulant [23,24] introducing time delays into the process [25,26] or more sophisticated variants of the Cz process, like the vapor pressure controlled Czochralski (VCz) method [27] which intentionally leads to reduced axial and radial temperature gradients making diameter control even more dicult [28,29]. More recently, the focus of control design has been extended to maintain additional degrees of freedom which aect crystal quality as well as crystal shape during the neck, shoulder and tail sections in addition to the main body [30,31].…”