Manufacturing large diameter GaAs substrates for epitaxial devices by VB method

Abstract

The VB method has advantages to grow substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low msidual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. PETS fabricated on Carbon doped high resistivity VB show high break down voltage. Vth was stable at higher drain voltages. Six inlch GaAs crystals are also grown by VB and show adequate characteristics.