Low‐Dimensional Hybrid Perovskites for Field‐Effect Transistors with Improved Stability: Progress and Challenges

Abstract

Hybrid perovskites have attracted considerable attention due to their excellent optoelectronic properties and facile processing. Beyond their wide usage in various energy‐related devices and optoelectronic applications, in particular photovoltaic cells, these materials have also been employed as active candidates in field‐effect transistors (FETs). However, the low stability of these materials is still a substantial challenge for their applications and commercialization. Low‐dimensional (two‐ or quasi‐two‐) perovskites, which are formed by introducing larger organic amine groups into the perovskite structure, not only offer great potential for the development of high stability devices, but also achieve higher field‐effect mobility due to the low ion migrations at room temperature. To date, the emerging low‐dimensional perovskite FETs have already gained unprecedented developments. This review mainly summarizes and evaluates the recent progress on low‐dimensional perovskite FETs and proposes solutions for the possible challenges. First, along with the detailed comparisons, the advantages of low‐dimensional perovskites that can overcome the demerits of conventional 3D perovskites for FETs are presented in detail. Thereafter, the achievements and development of low‐dimensional perovskite‐based FETs are briefly reviewed, followed by the discussion of field‐effect mobility and other challenges and opportunities of low‐dimensional perovskites for FETs. Finally, a summary and outlook are given.

Charge Transport in 2D Layered Mixed Sn–Pb Perovskite Thin Films for Field‐Effect Transistors

“…No noticeable hysteresis is observed, suggesting that the vertical ion migration in all the films can be suppressed effectively because the large PEA + chains prevent ions from moving across the organic layers. [ 42 ]…”

Tailoring Anchoring Groups in Low‐Dimensional Organic Semiconductor‐Incorporated Perovskites

“…Metal halide perovskites are intensively researched in solar cells, [ 1 ] detectors, [ 2 ] field‐effect transistors, [ 3 ] and light‐emitting diodes, [ 4 ] owing to their outstanding properties, such as low‐cost solution processability, [ 5 ] high absorption coefficient, [ 6 ] long charge carrier diffusion length, [ 7 ] high defect tolerance, [ 8 ] and narrow full width at half‐maximum (FWHM) with high quantum yield. [ 9 ] Perovskite materials were first used for photovoltaic applications in 2009.…”

“…There is a large number of functional organic molecules which show potential of being incorporated into 2D layered hybrid perovskites, including insulating aliphatic ammonium cations with large energy bandgaps and poor charge transport properties, and semiconducting organic moieties such as aromatic pyrene, acene, diacetylene, and carbazole units, which can further tune the electronic and optical properties of 2D perovskites. [ 17 ] In this regard, oligothiophene derivatives with tunable energy levels have recently received a lot of attentions [3d,5c,18] . Gao et al synthesized several oligothiophene derivatives, including bithiophene (2T), tetrathiophene (4T), and methyl substitute tetrathiophene (4Tm) ammonium, as organic ligands for 2D organic–inorganic hybrid perovskites.…”

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

“…[7] Similarly, significant advances have been made in the field of perovskite light-emitting diodes (LEDs) since their first demonstration in 2014: [8] the external quantum efficiency of perovskite LEDs has increased by an order of magnitude in only a few years, surpassing 20%. [9] Lagging behind in both performance and reliability are the perovskite field-effect transistors (FETs), [10][11][12][13][14][15][16] with a significantly smaller number of reports describing the application of perovskite semiconductors in FETs in comparison to a large body of literature on perovskite solar cells or LEDs, in spite of the fact that the first manuscript on perovskite FETs preceded all reports on other applications. [17] Nevertheless, the high predicted charge carrier mobility and the ease of processing using scalable, costefficient manufacturing techniques, as demonstrated for large area solar cell modules [18] and other applications, [19] motivate and sustain the research on perovskite FETs.…”

“…[24][25][26] Despite these expectations, the performance of perovskite FETs reported to date is disappointingly low: mobility values vary from 10 -5 cm 2 V -1 s -1 in non-optimized thin films to ≈50 cm 2 V -1 s -1 in high quality single crystals. [10,15,16,[27][28][29][30][31][32][33] The analysis of these devices is complicated by ion migration, [34] which screens the applied voltages and by charge carrier scattering at the interface with the dielectric layer. The obvious question to pose is whether perovskite FETs are indeed serious contenders for thin film electronic circuits that could potentially be integrated with the other types of perovskite optoelectronic devices, or is this an application that perovskites cannot address at competitive levels?…”