Abstract:The optoelectronic characteristics of organic–inorganic perovskites can be tailored by mixing different metal cations with various ratios. 2D layered organic–inorganic perovskites with charge transport anisotropy are considered as promising channel materials for field‐effect transistors. However, there are few reports about 2D Pb‐based perovskite thin film transistors although their Sn counterparts have been extensively investigated for use in this field. Herein, the synthesis and tuning of the physical proper… Show more
“…The transfer plots (square root of current) for mobility calculations are shown in Figure S5 A. The saturation mobility ( μ ) of 0.25 ± 0.08 cm 2 V −1 s −1 , threshold voltage ( V TH ) of −21 ± 1.6 V, and on/off ratio ( I on / I off ) of 10 4 (channel length L = 160 μm, channel width W = 1000 μm) were obtained in the devices, as shown in Figure 3 C. These performance merits are similar to those reported in previous studies ( Qin et al., 2021 ; Zhang et al., 2019 ; Zhu et al., 2020b ). Figure 3 Fabrication and characterization of (PEA) 2 SnI 4 FETs (A) Device configuration of (PEA) 2 SnI 4 BGBC FET.…”
Section: Resultssupporting
confidence: 88%
“…Previously, Qin et al. reported the substitutional doping of (PEA) 2 SnI 4 by Pb 2+ , which leads to improved environmental stability of (PEA) 2 SnI 4 FETs but depressed hole transport owing to the larger effective mass of Pb and higher contact resistance in the devices ( Qin et al., 2021 ). Reo et al.…”
“…The transfer plots (square root of current) for mobility calculations are shown in Figure S5 A. The saturation mobility ( μ ) of 0.25 ± 0.08 cm 2 V −1 s −1 , threshold voltage ( V TH ) of −21 ± 1.6 V, and on/off ratio ( I on / I off ) of 10 4 (channel length L = 160 μm, channel width W = 1000 μm) were obtained in the devices, as shown in Figure 3 C. These performance merits are similar to those reported in previous studies ( Qin et al., 2021 ; Zhang et al., 2019 ; Zhu et al., 2020b ). Figure 3 Fabrication and characterization of (PEA) 2 SnI 4 FETs (A) Device configuration of (PEA) 2 SnI 4 BGBC FET.…”
Section: Resultssupporting
confidence: 88%
“…Previously, Qin et al. reported the substitutional doping of (PEA) 2 SnI 4 by Pb 2+ , which leads to improved environmental stability of (PEA) 2 SnI 4 FETs but depressed hole transport owing to the larger effective mass of Pb and higher contact resistance in the devices ( Qin et al., 2021 ). Reo et al.…”
“…For example, Qin et al reported that partial replacement of Sn 2+ in (PEA) 2 SnI 4 with Pb 2+ would improve the stability, although accompanied by sacrificing its electrical properties such as carrier mobility. [ 10 ] Wang et al demonstrated that Eu 2+ ion doping of (PEA) 2 SnI 4 can promote the film quality and inhibit Sn 2+ oxidation to decrease the Sn 4+ defect density. [ 11 ] In spite of these progresses, efficient and convenient methods for tuning the performance of (PEA) 2 SnI 4 FETs are still in demand.…”
the performance of semiconductor devices. In conventional silicon-based devices, doping is widely employed as an effective way to tune the device performance. In general, doping can tune the electrical properties of semiconductors such as carrier density, Fermi level, and mobility to optimize device performance. [1] Typically, a higher hole density is obtained for p-doped Si, and a higher electron density is obtained for n-doped Si. [2] In recent years, new semiconductors have flourished, such as 2D semiconductors, [3] organic semiconductors (OSCs), [4] perovskite semiconductors, [5] etc. Among them, perovskite semiconductors have been heavily studied for their excellent optoelectronic property, especially in the field of solar cells and light-emitting devices. In addition, perovskite semiconductors are also quite promising in the application of FETs due to their high intrinsic mobilities over 100 cm 2 V −1 s −1 measured by terahertz techniques. [6] However, obtaining perovskite FETs that can function well at room temperature is challenging, which is attributed to the partially screened gate electric field by ion migration. [7] 2D Ruddlesden-Popper perovskites are considered an exceptional option to alleviate the ion migration problem due to their unique layered structures, where bulky organic chains can inhibit the ion migration along the direction perpendicular toThe development of techniques for tuning/controlling the properties of electronic devices such as field-effect transistors (FETs) is important for the optimization of device performance or the realization of custom-designed device functions. Here, a simple method for tuning the performance of 2D perovskite ((PEA) 2 SnI 4 ) FETs by transferring organic semiconductor PDVT-10 films onto (PEA) 2 SnI 4 films to form van der Waals heterojunctions (vdWHs) is presented. By varying the electrical properties of PDVT-10 with doping technique, the performance of (PEA) 2 SnI 4 FETs can be effectively tuned in terms of on-state current, threshold voltage, and mobility, with mobility increased from 0.10 cm 2 V −1 s −1 for pristine (PEA) 2 SnI 4 FETs to 0.46 cm 2 V −1 s −1 for the vdWH-based FETs. This phenomenon can be attributed to the holes transfer occurring at heterojunction interface. More interestingly, the performance of the (PEA) 2 SnI 4 FETs can be almost fully recovered once the PDVT-10 films are removed, indicating the reversibility of the method. Such method of tuning semiconductor device performance by forming vdWHs can be also extended to other semiconductors and devices.
“…Since 2009 when Miyasaka and co‐workers [ 1 ] first applied MHP to solar cells and realized a power conversion efficiency (PCE) of 3.8%, rapid improvements in PCE (currently up to 25.5% [ 2 ] ) have been achieved. Because of the tunable optical and electronic properties of MHPs combined with facile processing procedures, [ 3 ] applications of MHPs are no longer limited to solar cells, but have quickly extended to light‐emitting diodes, [ 4,5 ] photodetectors, [ 6–9 ] amplified spontaneous emission of lasers, [ 10–13 ] field‐effect transistors, [ 14,15 ] etc.…”
Section: Introductionmentioning
confidence: 99%
“…
cells and realized a power conversion efficiency (PCE) of 3.8%, rapid improvements in PCE (currently up to 25.5% [2] ) have been achieved. Because of the tunable optical and electronic properties of MHPs combined with facile processing procedures, [3] applications of MHPs are no longer limited to solar cells, but have quickly extended to light-emitting diodes, [4,5] photodetectors, [6][7][8][9] amplified spontaneous emission of lasers, [10][11][12][13] fieldeffect transistors, [14,15] etc. Among all possible combinations in the category of perovskite materials, triplecation perovskites, consisting of cesium (Cs + ), methylammonium (MA + ), and formamidinium (FA + ) cations at A-site in the ABX 3 structure, have gained tremendous attention.
cells and realized a power conversion efficiency (PCE) of 3.8%, rapid improvements in PCE (currently up to 25.5% [2] ) have been achieved. Because of the tunable optical and electronic properties of MHPs combined with facile processing procedures, [3] applications of MHPs are no longer limited to solar cells, but have quickly extended to light-emitting diodes, [4,5] photodetectors, [6][7][8][9] amplified spontaneous emission of lasers, [10][11][12][13] fieldeffect transistors, [14,15] etc. Among all possible combinations in the category of perovskite materials, triplecation perovskites, consisting of cesium (Cs + ), methylammonium (MA + ), and formamidinium (FA + ) cations at A-site in the ABX 3 structure, have gained tremendous attention. Saliba et al. [16] demonstrated that triple-cation perovskites show outstanding stability in photovoltaic devices and reproducibility during the fabrication process. By introducing a small amount of Cs + in MHPs, unstable yellow phase is effectively suppressed, [16] allowing the formation of a more stable black perovskite phase, which resists against humidity and temperature. The performance of solar cells employing the triple-cation perovskites has improved rapidly in the last 5 years. [17][18][19][20] Zhou and co-workers [20] have obtained an outstanding PCE of 21.46% by simultaneously passivating both anion and cation vacancies in the perovskite layer, and the device preserves 90% of the original PCE after 1000 h of operation. Recently, tandem devices combining triple-cation perovskites and c-Si have reached a PCE of >25%. [21] To fabricate solar cells with desirable performance, it is of vital importance to make high-quality perovskite films by controlling the crystallization process. By doing so, the nonradiative recombination is suppressed. Such positive effects have been reported by Gao et al. in the relevant morphology studies on porphyrin-based organic photovoltaics. [22,23] In this regard, multiple strategies have been developed. The traditional methods to control crystallization require a final step by annealing and drying the liquid films at temperatures ranging from 70 to 150 °C, to form a solid film. [24][25][26][27][28] Despite the simplicity of this method, annealing tends to yield films with rough surface and pores, and defects in the crystalline structure. [29] An alternative approach is to partially or fully replace annealing with ultrasonic vibration with nanoscale amplitudes imposed on the thin liquid films during drying.Ultrasonic vibration imposed on the substrate of a drying perovskite solution film has previously been proposed as a nearly annealing-free method to improve film quality and thus the photovoltaic performance for perovskite solar cells. However, an in-depth understanding of the underlying mechanism of the improved film quality via ultrasonic vibration is still lacking. In this work, the effects of substrate vibration post treatment on the carrier lifetime and mobility are studied in triple-cation perovskite films. With 80 s of annealing-free...
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