Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation

Liu, Mingguo; Bai, Xiaogang; Hu, Chong; Campbell, Joe C.; Zeng, Pan; Tashima, M. M.

doi:10.1109/lpt.2007.891939

Cited by 41 publications

(27 citation statements)

References 9 publications

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“…A DCR of 12 kHz and timing resolution of 140 ps was reported for epitaxial InGaAs-InP SPAD [56]. Room temperature free-running InGaAs/InP SPADs were developed by Warburton, et al [57].…”

Section: Performancementioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

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While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors, while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

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“…A DCR of 12 kHz and timing resolution of 140 ps was reported for epitaxial InGaAs-InP SPAD [56]. Room temperature free-running InGaAs/InP SPADs were developed by Warburton, et al [57].…”

Section: Performancementioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

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“…High sensitivity ultraviolet avalanche photodetectors (APDs) have many important applications, including UV communications, biological detection and identification, and water quality monitoring [1]. The tremendous progress of GaN/AlGaN, GaN/AlN, and GaN/Si material growth technology in recent years makes these materials promising candidates for high-performance photodetectors operating in the UV spectral region [2] [3].…”

Section: ⅰ Introductionmentioning

confidence: 99%

“…The tremendous progress of GaN/AlGaN, GaN/AlN, and GaN/Si material growth technology in recent years makes these materials promising candidates for high-performance photodetectors operating in the UV spectral region [2] [3]. Currently, significant work has been done on the development of APDs using semiconductor materials with wide band gap such as AlGaN and GaN because the detectors can be inherently solar or visible blind, have low dark current, and operate in harsh environments [1,4].…”

Section: ⅰ Introductionmentioning

confidence: 99%

Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs

et al. 2014

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A visible-blind ultraviolet GaN back-illuminated avalanche photodiode with separate absorption and multiplication regions are simulated based on driftdiffusion equation. The current-voltage characteristics of the device have been numerically obtained. The result is in good agreement with the experimental data. It was found that the thickness of the multiplication layer is important to improve the electrical field profiles and spectral response characteristics. A peak responsivity of 106.5mA/W is achieved at 364 nm corresponding to the cutoff wavelength of GaN.

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“…SPADs that operate at 1.55 μm, typically require more cooling because the lower bandgap of InGaAs results in higher dark current. Liu et al [12] have reported high single-photon detection efficiency (~40%) and low dark count rate (< 10 4 /s) at 220 K. Verghese et al, reported SPADs with InGaAs absorbers optimized for 1.55 μm wavelength; at 240 K these SPADs achieved dark count rates <20 kHz with photon detection efficiency as high as 45% [5]. Recently a dark count rate as low as 1 kHz and 20% detection efficiency have been achieved at 243 K [13].…”

Section: Introductionmentioning

confidence: 99%

Infrared single photon avalanche detectors

Campbell

2010

Phys. Status Solidi (c)

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Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation

Cited by 41 publications

References 9 publications

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs

Infrared single photon avalanche detectors

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