Low-Damage Sputtering of GaAs and GaP Using Size-Selected Ar Cluster Ion Beams

Abstract

We have calculated the Raman spectrum of strained Ge 0.11 Si 0.89 wires sandwiched between Si layers. Because of the relatively large width and penetration depth of the laser beam the volume sampled by the beam is large. Using the strain components calculated by the finite element method, the strain induced Raman shifts and Raman spectra were calculated at each point in the volume sampled. The final spectrum obtained by superposing these spectra shows excellent agreement with the observed spectrum. The strain induced shift measured by micro Raman in nonuniformly strained solids does not give strain values in a straightforward manner.

Combining Advanced Photoelectron Spectroscopy Approaches to Analyse Deeply Buried Gap(As)/Si(100) Interfaces: Interfacial Chemical States and Complete Band Energy Diagrams

“…The energy per ion can be tuned to a few electron volts only. The dissociated cluster on the surface removes material laterally from the near surface area and the subsurface area is sparsely disturbed [34]. GCIB sputtering in combination with in situ XPS was used to analyze the depth profile of organic materials [35], inorganic materials [36], and, in particular, GaP/Si(100) heterostructures [37].…”

Development of Cu Etching Using O2 Cluster Ion Beam under Acetic Acid Gas Atmosphere

“…12) GCIB has been used for various applications such as surface smoothing, low damage etching, high rate sputtering, and so on. [13][14][15][16] By using O 2 -GCIB, the Cu surface is oxidized anisotropically. Acetic acid gas is then used to remove the CuO.…”

Non-Contact Wafer Fabrication Process Using Gas Cluster Ion Beams

“…Very dense energy was deposited near the surface and multiple colhsions with target atoms will take place with very low energy per atom. By utihzing characteristics of cluster ions, industrial apphcations has been started such as shallow ion implantation [2], surface smoothing [3], lowdamage etching [4] and high quality thin film assisted depositions [5]. Since the GCIB is an ion beam process, any desired poison on a wafer can be processed by controlhng the location of the irradiation point.…”