Non-Contact Wafer Fabrication Process Using Gas Cluster Ion Beams

Abstract

Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces Rev. Sci. Instrum. 83, 073304 (2012) Coupled-monomers in molecular assemblies: Theory and application to the water tetramer, pentamer, and ring hexamer J. Chem. Phys. 136, 144113 (2012) Thermally induced polarizabilities and dipole moments of small tin clusters J. Chem. Phys. 136, 134320 (2012) A DFT+U study of acetylene selective hydrogenation on oxygen defective anatase (101) and rutile (110) TiO2 supported Pd4 cluster Abstract. Gas cluster ion beam (GCIB) was used for precise wafer fabrication process. GCIB realizes a quite lowenergy ion beam and shows very precise and good repeatability. To obtain thickness uniformity of Si over the whole wafer, small beam diameter (~ 4mm) of GCIB was used. Thickness variations on the wafer can be reduced by location specific irradiation of coUimated GCIB. By controlling the scan speed of GCIB irradiation based on the removal thickness at each irradiation position, thickness and height uniformity of Si can be improved to several tens of nm. In addition, etching enhancement by using Ar/SFg mixed cluster was studied.