Combining Advanced Photoelectron Spectroscopy Approaches to Analyse Deeply Buried Gap(As)/Si(100) Interfaces: Interfacial Chemical States and Complete Band Energy Diagrams

et al. 2022

Preprint

Interfaces are key elements that define electronic properties of the final device. Inevitably, the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is a promising method to address such a challenge. For the first time, we demonstrate the TCS-PES on III-V architectures. A MULTIPREPTM polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve reproducibility of the polishing procedure. With such equipment, we demonstrate that preparing the TCS of III-V semiconductor devices with tapering angles lower than 0.02° is possible. The TCS-PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks, prepared by metalorganic chemical vapor deposition (MOCVD). Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

“…Depth-profiling XPS confirmed the tendency of In to segregate at the GaAs|GaInP interface and give rise to mixed phases [17,18].…”

Section: Introductionmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

et al. 2022

Preprint

“…Depth-profiling XPS confirmed the tendency of In to segregate at the GaAs|GaInP interface and give rise to mixed phases. [17,18] Strategies to investigate buried interfaces with PES can be divided into two main groups: bottom-up and top-down approaches. The first strategy mainly consists of so-called interface experiments.…”

Section: Introductionmentioning

confidence: 99%

“…It includes PES depth-profiling methods for which ion gun etching cycles and PES measurements are alternated. [17,18,20] In these works Romanyuk et al combined XPS with Ar gas cluster ion beam sputtering, they studied the GaP/Si(001) interface and the addition of As to suppress the formation of antiphase domains. [18,20] The top-down approach also includes the more recent Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) method.…”

Section: Introductionmentioning

confidence: 99%

“…[17,18,20] In these works Romanyuk et al combined XPS with Ar gas cluster ion beam sputtering, they studied the GaP/Si(001) interface and the addition of As to suppress the formation of antiphase domains. [18,20] The top-down approach also includes the more recent Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) method. A TCS is a very lowangle cross-section that is extended enough so that the lateral resolution of the PES setup is not limiting anymore.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

et al. 2022

Preprint

Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is promising to address such a challenge. We demonstrate here that the TCS-PES can be used to study the relevant heterojunction in epitaxial III-V architectures prepared by metalorganic chemical vapor deposition. A MULTIPREPTM polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve the reproducibility of the polishing procedure. With this procedure, we demonstrate that preparing the TCS of III-V semiconductor devices with tapering angles lower than 0.02° is possible. The PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks. Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

et al. 2022

Adv Materials Inter

Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III–V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross Section Photoelectron Spectroscopy (TCS‐PES) approach is promising to address such a challenge. That the TCS‐PES can be used to study the relevant heterojunction in epitaxial III–V architectures prepared by metalorganic chemical vapor deposition is demonstrated here. A MULTIPREP polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve the reproducibility of the polishing procedure. With this procedure, that preparing the TCS of III–V semiconductor devices with tapering angles lower than 0.02° is possible is demonstrated. The PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks. Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.