Abstract:Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is promising to address such a challenge. We demonstrate here that the TCS-PES can be used to study the relevant heterojunction in epitaxial III-V architectures prepared by metalorganic chemical vapor deposition. A… Show more
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