Abstract:A novel approach for wafer-level test and monitoring of multilayer metal-stack integrity in integrated circuit process technology based on the low-cycle fatigue of power device metallization structure is described. Repetitive power pulsing at the limit of the electro-thermal safe-operating area of the devices reveals systematic changes in level and homogeneity of intrinsic thermomechanical robustness and is able to activate latent defects. Exemplarily for two smart-power process technologies the intrinsic low-… Show more
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