Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

Zeimpekis, Ioannis; Hu, Chunxiao; Ditshego, Nonofo M.J.; Thomas, O.; Planque, Maurits R.R. de; Chong, Harold M. H.; Morgan, Hywel; Ashburn, P.

doi:10.1016/j.mee.2016.02.016

Cited by 18 publications

(11 citation statements)

References 17 publications

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“…Although this enables the deposition of highly conductive films, high-quality ZnO films are difficult to obtain with low carrier concentration. The plasma-enhanced ALD is preferably used when low-carrier concentration ZnO is required [ 19 , 20 ]. We recently reported the capability of tuning ZnO using a single plasma-enhanced ALD process which allows the tuning of its resistivity and carrier concentration up to three orders by using different O 2 plasma times [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

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A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2308-1) contains supplementary material, which is available to authorized users.

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Section: Introductionmentioning

confidence: 99%

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

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“…7). 57 On the other hand, some other technologies, such as nanowire biosensors, present great potential for the quantitation of protein biomarkers at POC settings, as these can be cost-effective 133 and allow sensitive detection without labels. 134,135 It has been shown that silicon nanowires with a primary antibody covalently bound to their surface enable the detection of biomarkers by registering a change in the conductance, which is proportional to the amount of antigen bound.…”

Section: View Article Onlinementioning

confidence: 99%

A critical insight into the development pipeline of microfluidic immunoassay devices for the sensitive quantitation of protein biomarkers at the point of care

Barbosa

Reis

2017

Analyst

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The latest clinical procedures for the timely and cost-effective diagnosis of chronic and acute clinical conditions, such as cardiovascular diseases, cancer, chronic respiratory diseases, diabetes or sepsis (i.e. the biggest causes of death worldwide), involve the quantitation of specific protein biomarkers released into the blood stream or other physiological fluids (e.g. urine or saliva). The clinical thresholds are usually in the femtomolar to picolomar range, and consequently the measurement of these protein biomarkers heavily relies on highly sophisticated, bulky and automated equipment in centralised pathology laboratories. The first microfluidic devices capable of measuring protein biomarkers in miniaturised immunoassays were presented nearly two decades ago and promised to revolutionise point-of-care (POC) testing by offering unmatched sensitivity and automation in a compact POC format; however, the development and adoption of microfluidic protein biomarker tests has fallen behind expectations. This review presents a detailed critical overview into the pipeline of microfluidic devices developed in the period 2005-2016 capable of measuring protein biomarkers from the pM to fM range in formats compatible with POC testing, with a particular focus on the use of affordable microfluidic materials and compact low-cost signal interrogation. The integration of these two important features (essential unique selling points for the successful microfluidic diagnostic products) has been missed in previous review articles and explain the poor adoption of microfluidic technologies in this field. Most current miniaturised devices compromise either on the affordability, compactness and/or performance of the test, making current tests unsuitable for the POC measurement of protein biomarkers. Seven core technical areas, including (i) the selected strategy for antibody immobilisation, (ii) the surface area and surface-area-to-volume ratio, (iii) surface passivation, (iv) the biological matrix interference, (v) fluid control, (vi) the signal detection modes and (vii) the affordability of the manufacturing process and detection system, were identified as the key to the effective development of a sensitive and affordable microfluidic protein biomarker POC test.

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“…In the latter case, the device is called GAA FET. Another option is to grow the NWs vertically using, for example, conformal chemical vapor deposition [54], dry etching with reduced oxidation techniques [55], or ion beam etching and the spacer etch technique presented in [56].…”

Section: Nanowires and 3-d Stackingmentioning

confidence: 99%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

Cited by 18 publications

References 17 publications

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

A critical insight into the development pipeline of microfluidic immunoassay devices for the sensitive quantitation of protein biomarkers at the point of care

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

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