Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors

Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Dae Ho; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sungha; Kim, Hyun Jae

doi:10.1021/am402857w

Cited by 61 publications

(40 citation statements)

References 30 publications

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“…With the 5‐SPA treatment, the device had a lower off‐current and a positive V th shift, with no change in the on‐current, compared with the H‐PA‐treated (200 °C, 5 atm of pressure) device. An oxygen pressure under 5 atm would likely not oxidize the back‐channel region sufficiently to decrease the off‐current and control the carrier concentration to reach an appropriate V th . In contrast, the 20‐SPA‐treated device had the lowest off‐current with a decrease in the on‐current.…”

Section: Resultsmentioning

confidence: 99%

Modified Stoichiometry in Homogeneous Indium–Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions

Tak

Rim

Yoon

et al. 2015

Adv Materials Inter

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several issues such as reliability and device performance. [ 4 ] To solve these problems, research has focused on material engineering, [ 5 ] post treatment engineering, [ 6,7 ] and structural engineering [ 8,9 ] approaches. However, the optimal structure for AOS TFTs has not been established, whereas amorphous and polycrystalline Si TFTs are generally manufactured with bottom-and top-gate structures, respectively.In AOS TFTs with a top-gate structure, the back-channel is not exposed to the environment because the gate dielectric acts as a passivation layer that prevents interaction with ambient gases. [ 10 ] Furthermore, the top-gate structure effectively reduces resistance-capacitance (RC) delay by decreasing overlap of the source/drain and gate electrodes via a self-alignment process. [ 11 ] Hence, the top-gate structure has also been suggested for the AOS TFT back-plane technology for high resolution and large displays. However, the top-gate structure is relatively diffi cult to manufacture using current production lines that use conventional fabrication processes designed for amorphous Si TFTs; many process steps are required. Although AOS TFTs with a bottom-gate structure could be manufactured more easily with existing processes, an additional etch stopper layer must be deposited to prevent chemical damage from occurring during the metal etching process, when the back-channel etch structure is employed. [ 12 ] Furthermore, a true passivation layer is needed because of the exposure of the back-channel to the external environment, [ 12,13 ] and the overlap between the source/ drain and gate electrodes causes poor device performance. [ 14 ] For these reasons, a hetero multi-stacked structure has recently been suggested. [ 8,9 ] This structure could improve the electrical characteristics and enable self passivation, without an additional passivation layer, by depositing channel material repeatedly during channel layer fabrication. In a hetero multi-stack structure, the front-channel has high conductivity and the backchannel has low conductivity because each layer leads to a moderate current fl ow and self passivation, respectively. However, a hetero multi-stack structure has several issues: the presence of interfaces in the middle of the channel layer, complicated diffusion effects among the channel layers, and high fabrication cost because of the need to use several depositions of rare materialsThe present study suggests a way to improve electrical characteristics and stabilities by forming a different stoichiometry in a homogeneous system without using a multiple deposition process. Post treatment by sequential pressure annealing (SPA) of a homogeneous indium-zinc oxide system is carried out to fabricate vertically graded oxygen defi ciencies via redox reactions. The SPA treatment consists of several steps. First, hydrogen pressure annealing is performed to chemically expedite the reduction reaction of weak chemical bonds in the overall channel region and thereby make the material highly conducting. Second, o...

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Section: Resultsmentioning

confidence: 99%

Modified Stoichiometry in Homogeneous Indium–Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions

Tak

Rim

Yoon

et al. 2015

Adv Materials Inter

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“…A unit DX tile was organized in two DX junctions, and two parallel duplexes were tied up. Two types of DX tiles were then used to construct DX DNA nanostructures 11 12 13 14 . Figure 1a shows the schematic diagrams of (1) the DNA nanostructure, (2) Cu 2+ ion coordination in the DNA, (3) doxorubicin coordination in DNA, and (4) the combination of Cu 2+ ions and doxorubicin coordination in DNA nanostructures.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 1a shows the schematic diagrams of (1) the DNA nanostructure, (2) Cu 2+ ion coordination in the DNA, (3) doxorubicin coordination in DNA, and (4) the combination of Cu 2+ ions and doxorubicin coordination in DNA nanostructures. In previous reports, we studied the concentration dependent physical characteristics of various ions and doxorubicin coordinated DNA molecules in order to estimate the optimum concentration for structural stability and determine significant changes in functionalities 13 14 15 16 17 18 19 . Considering the parameters required to maintain deformation-free DNA nanostructures, we added the appropriate amounts of Cu 2+ ions and doxorubicin molecules into the DNA nanostructures.…”

Section: Resultsmentioning

confidence: 99%

M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity

Park

Dugasani

Kang

et al. 2016

Sci Rep

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Here, we report a high performance biosensor based on (i) a Cu2+-DNA/MoS2 hybrid structure and (ii) a field effect transistor, which we refer to as a bio-FET, presenting a high sensitivity of 1.7 × 103 A/A. This high sensitivity was achieved by using a DNA nanostructure with copper ions (Cu2+) that induced a positive polarity in the DNA (receptor). This strategy improved the detecting ability for doxorubicin-like molecules (target) that have a negative polarity. Very short distance between the biomolecules and the sensor surface was obtained without using a dielectric layer, contributing to the high sensitivity. We first investigated the effect of doxorubicin on DNA/MoS2 and Cu2+-DNA/MoS2 nanostructures using Raman spectroscopy and Kelvin force probe microscopy. Then, we analyzed the sensing mechanism and performance in DNA/MoS2- and Cu2+-DNA/MoS2-based bio-FETs by electrical measurements (ID-VG at various VD) for various concentrations of doxorubicin. Finally, successful operation of the Cu2+-DNA/MoS2 bio-FET was demonstrated for six cycles (each cycle consisted of four steps: 2 preparation steps, a sensing step, and an erasing step) with different doxorubicin concentrations. The bio-FET showed excellent reusability, which has not been achieved previously in 2D biosensors.

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“…Amorphous oxide-based transistors were proposed as promising fundamental unit in sensory platform due to their low process temperature, superior electrical properties, high reliability and easy reproducibility 24 25 26 . To date, remarkable sensing performances have been demonstrated in these oxide-based transistors 27 28 29 . For portable applications, low-voltage operation is preferred.…”

mentioning

confidence: 99%

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

Ning

Zhu

Feng

et al. 2015

Sci Rep

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Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

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Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors

Cited by 61 publications

References 30 publications

Modified Stoichiometry in Homogeneous Indium–Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions

Modified Stoichiometry in Homogeneous Indium–Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions

M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

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