Low-cost far infrared bolometer camera for automotive use

Vieider, C.; Wissmar, Stanley; Ericsson, Per; Halldin, Urban; Niklaus, Frank; Stemme, G.; Källhammer, Jan-Erik; Pettersson, Håkan; Eriksson, Dick; Jakobsen, Henrik; Kvisterøy, T.; Franks, John; VanNylen, Jan; Vercammen, Hans; Vanhulsel, Annick

doi:10.1117/12.721272

Cited by 29 publications

(16 citation statements)

References 10 publications

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“…For a given pixel pitch, there are several design issues relating to both the sensor material and the sensor-to-ROIC integration process that must be considered to reach overall good performance. We have previously reported on some aspects of sensor material design and optimization [6,7] and on the integration process for 25x25 µm pitch pixels [8][9][10]. In this paper we will address further design aspects of the infrared absorbing internal quarter wave cavity and present the latest results on scaling of the heterogeneous integration process down to 17x17 µm pitch bolometer arrays.…”

Section: Introductionmentioning

confidence: 99%

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Ericsson¹,

Fischer

Forsberg

et al. 2011

SPIE Proceedings

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Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe-art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40µm x 40µm and 25µm x 25µm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17µm x 17µm.

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Section: Introductionmentioning

confidence: 99%

Toward 17Âµm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays

Ericsson¹,

Fischer

Forsberg

et al. 2011

SPIE Proceedings

Self Cite

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show abstract

“…Today, commonly used thermistor materials such as vanadium oxide (VO x ), amorphous, and polycrystalline semiconductors demonstrate moderate noise levels and TCR values around 2%-4% (Lv, Hu, Wu, & Liu, 2007;Moreno, Kosarev, Torres, & Ambrosio, 2007). Recent studies have proposed single crystalline (sc) SiGe as a thermistor material (Di Benedetto, Kolahdouz, Malm, Ostling, & H. H. Radamson, 2009;Vieider et al, 2007;S. Wissmar, H. Radamson, Kolahdouz, & J. Y. Andersson, 2008) demonstrating a high signal-to-noise level.…”

Section: Figures Of Merit For Thermistor Materialsmentioning

confidence: 99%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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“…Using Via-Last Processes Demonstrations of via-first heterogeneous integration technologies for MEMS and NEMS include infrared bolometer arrays [8][9][10][11][12][13][14], arrays of tilting and piston-type micro-mirrors [14][15][16][17][18], micro-pirani vacuum gauges [19], RF MEMS [1,20] and many more devices [1]. For most of these applications, adhesive wafer bonding has been used to join the MEMS and the IC wafers.…”

Section: B Wafer-level Heterogeneous 3d Integration Platformsmentioning

confidence: 99%