2016
DOI: 10.1109/tcsii.2016.2531100
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Low-Complexity Multiternary Digit Multiplier Design in CNTFET Technology

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Cited by 44 publications
(45 citation statements)
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“…The proposed decoder, a half adder and a 1-digit multiplier, as well as the latest published works [12] and [14]- [18] have been simulated through HSPICE [19] in 32nm technology by applying the Stanford compact model for CNTFET [20] and keeping the same voltages and parasitic capacitances.…”
Section: Simulation Resultsmentioning
confidence: 99%
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“…The proposed decoder, a half adder and a 1-digit multiplier, as well as the latest published works [12] and [14]- [18] have been simulated through HSPICE [19] in 32nm technology by applying the Stanford compact model for CNTFET [20] and keeping the same voltages and parasitic capacitances.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…Also, the transistor count of the proposed decoder is 6, while the transistor counts of designs [15] and [17] are 8 and 9 respectively. The proposed half adder and 1-digit multiplier are compared with [12] and [14]- [18] designs at 1 GHz frequency, 0.9 V supply voltage, 3.5 fF load capacitance, 20 ps rise, 20 ps fall time scenario and 25 • C temperature conditions in Table 8 and 9 respectively, showing transistor count, power consumption, delay, PDP and power supply count.…”
Section: Simulation Resultsmentioning
confidence: 99%
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