Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

Krier, A.; Yin, Min; Marshall, Andrew; Kesaria, Manoj; Krier, S.; McDougall, S.D.; Meredith, W.; Johnson, Andrew; Inskip, J.; Scholes, A.

doi:10.1016/j.infrared.2015.09.011

Cited by 15 publications

(10 citation statements)

References 8 publications

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“…When concentrating the 800 °C radiation to about 4 W/ cm 2 at room temperature, the TPV efficiency increased to 1.3%, largely due to the 3 times increase in Voc. Using a 950 °C blackbody source with 720 mW/cm 2 power density as in our previous work, this InAs TPV achieved Jsc = 1.32 A/cm 2 at 300 K Tc, which is about 47% higher than the LPE grown InAs TPV with an InAsSbP window layer [13]. The power efficiency was estimated around 3.6%, which is also a little higher than our previously reported value.…”

Section: Resultsmentioning

confidence: 44%

“…However, until now, much less investigation has been carried out on InAs based TPVs compared with GaInAsSb and GaSb devices. Voc of ~0.06 V and Jsc of ~0.9 A/cm 2 have been obtained from InAs TPV cells illuminated by a 950 °C thermal source [13]. But relatively little information has been reported on the operating characteristics and potential of InAs TPVs.…”

Section: Introductionmentioning

confidence: 99%

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InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

Zhou

Krysa

et al. 2018

Solar Energy Materials and Solar Cells

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InAs thermophotovoltaic (TPV) cells with external quantum efficiency at the peak wavelengths reaching 71% at low temperature and 55% at room temperature are reported, which are the highest values to date for InAs. The TPV exhibited 10% power conversion efficiency at 100 K cell temperature. The dark and light current-voltage characteristics were measured at different cell temperatures (100-340 K) in response to heat sources in the range 500-800 °C. The resulting dependences of the output voltage and current as well as the spectral response of the InAs TPV have been extensively characterized for waste heat recovery applications. The performance of these cells is strongly determined by the dark current which increases rapidly with increasing cell temperature originating from bandgap narrowing, which resulted in a reduction of open circuit voltage and output power.

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Section: Resultsmentioning

confidence: 44%

Section: Introductionmentioning

confidence: 99%

InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

Zhou

Krysa

et al. 2018

Solar Energy Materials and Solar Cells

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“…Even though the condenser section contributes to major energy losses as waste heat in the thermal power plant system, the temperature condition makes any recovery technologies impossible to be deployed. In particular, TPV system recorded the lowest possible heat source temperature of 345 ºC with InAs TPV cell [67]. Therefore, the studies concluded the huge potential for TPV implementation in thermal power plant which can be done at boiler and turbine section.…”

Section: B Tpv Implementation In Thermal Power Plantmentioning

confidence: 93%

Recent Development of Thermophotovoltaic System for Waste Heat Harvesting Application and Potential Implementation in Thermal Power Plant

et al. 2020

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Rapid depletion of fossil fuels due to the growing demand for energy has resulted in a worldwide concern to improve energy conversion efficiency. Yet, the energy conversion of conventional fossil fuel power generation plants remains relatively low (less than 40%) and a huge amount of energy is wasted in the form of heat, leading to global warming issues. Recycling and recuperating even a small portion of energy losses could provide a huge impact on energy saving and minimize the reliance on fossil fuels. Thermophotovoltaic system appears to be a potential candidate to capture, recover, and convert waste heat energy into useful electricity. This paper presents an overview of the recent development of thermophotovoltaic technology for waste heat recovery applications. Each component in the thermophotovoltaic system including thermophotovoltaic generator/heat source, thermal emitter, spectral filter and thermophotovoltaic cells is vital and can be engineered to achieve a better heat-to-electricity conversion efficiency. Recently, researchers have shown great interest in near-field thermophotovoltaic systems where higher power intensity can be captured by the thermophotovoltaic cell, thus improving the overall system performance. Furthermore, the potential locations for energy scavenging in thermal power plants is investigated based on the on-site temperature measurement. In Malaysia, it is estimated that around 3,831 GWh of waste heat energy could be saved in operational thermal power plants. This review will contribute to the knowledge for future development thermophotovoltaic systems in waste heat recovery applications while summarizing the potential locations for energy scavenging in thermal power plants.

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“…The bandgap of InAs is about 0.35eV, the InAs TPV cells fabricated by the Zn diffusion method absorb the photons in the range of 1~3.5 m µ [5,[20][21][22][23]，thus they have import applications in low temperature TPV systems. Figure 8a shows the Zn profiles in n-InAs under Ga-rich conditions.…”

Section: Zn Diffusion In Inasmentioning

confidence: 99%

The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

Tang¹,

Liu³

2016

IJMSA

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Zn diffusion in III-V compound semiconductors are commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically under group III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except In As. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

Cited by 15 publications

References 8 publications

InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

Recent Development of Thermophotovoltaic System for Waste Heat Harvesting Application and Potential Implementation in Thermal Power Plant

The Effect of Self-Diffusion on the Zn Diffusion in III-V Compound Semiconductors

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