2018
DOI: 10.1016/j.solmat.2017.12.031
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InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

Abstract: InAs thermophotovoltaic (TPV) cells with external quantum efficiency at the peak wavelengths reaching 71% at low temperature and 55% at room temperature are reported, which are the highest values to date for InAs. The TPV exhibited 10% power conversion efficiency at 100 K cell temperature. The dark and light current-voltage characteristics were measured at different cell temperatures (100-340 K) in response to heat sources in the range 500-800 °C. The resulting dependences of the output voltage and current as … Show more

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Cited by 46 publications
(17 citation statements)
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“…To achieve higher J sc , the cells needed to be mounted closer to the lamp, which was likely to heat the TPVs. As was demonstrated in our previous work [44], higher cell temperature can have a big impact on the reduction of V oc due to the increase in J 0 .…”
Section: Electrical Characterizationsupporting
confidence: 62%
“…To achieve higher J sc , the cells needed to be mounted closer to the lamp, which was likely to heat the TPVs. As was demonstrated in our previous work [44], higher cell temperature can have a big impact on the reduction of V oc due to the increase in J 0 .…”
Section: Electrical Characterizationsupporting
confidence: 62%
“…Rajashekara [7]; Lu et al [117] Comparative analyses of the attributes of the systems show that IPVFC systems will be competitive among these alternative technologies because it is suitable for long-term energy storage; depends on solar energy which is ubiquitous; can be applied for both mobile and stationary applications. It also has zero emissions during operation as the combustion of hydrogen in the fuel cell produces water and heat as by-products.…”
Section: Ferrari Et Al [8]mentioning
confidence: 99%
“…The tandem cell consists of two -on-TPV subcells: an InAs bottom cell and a GaInAsSb top cell. Because an InAs cell has a narrow bandgap and can operate at room temperatures [44,45], we selected it as a bottom cell. For a wider-bandgap top cell, we chose Ga In 1− As Sb 1− quaternary semiconductor of which electrical and optical properties can be tuned according to the and composition ratio.…”
Section: Theoretical Modelingmentioning
confidence: 99%