Long-wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)

Abstract

Room temperature continuous-wave operation of InAsSb quantum-dot distributed feedback lasers Appl. Phys. Lett. 87, 203102 (2005); 10.1063/1.2130527 Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate Appl.

Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure

“…It can be inferred that the threshold value of growth rate lies on the diffusion speed of the atoms absorbed on the substrate surface. Note that by MBE [8,10] or MOCVD [2,12] can be achieved at the substrate temperature range of 400-480 1C, and one could see some differences in growth mechanism between magnetron sputtering and MBE or MOCVD. Fig.…”

“…So far, epitaxial films of mid-range InAs x Sb 1Àx have been successfully grown on GaAs substrates by molecular beam epitaxy (MBE) [8][9][10][11] and MOCVD [2,12,13]. However, hitherto no report in the literature about the growth of InAs x Sb 1Àx films on GaAs substrates by magnetron sputtering has been found.…”

“…With satisfying material properties and highly advanced III-V semiconductor processing [3][4][5][6]. A cut-off wavelength up to 14 mm at room temperature has been reported for p-type InAs 0.23 Sb 0.77 grown on GaAs substrates by lowpressure metalorganic chemical vapor deposition (LP-MOCVD) [2]. GaAs is an excellent substrate for its high quality and low cost; moreover, it helps to integrate detection and signal processing circuits and reduce parasitic capacitances.…”

“…At present, Hg 1Àx Cd x Te is the dominant material system for long-wavelength infrared applications. However, it suffers from instability and nonuniformity over a large area due to the weakness of mercury bonding in the compound [1] and high mercury vapor pressure during material growth [2], respectively. With satisfying material properties and highly advanced III-V semiconductor processing [3][4][5][6].…”

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

“…Recently, there has been interest in ternary III-V alloys for long-wavelength infrared detector applications as an substitute to HgCdTe, which suffers from instability problems [1,2]. As an alternative to HgCdTe, InAs x Sb 1Àx grown on GaSb is a promising material for the realization of low-cost room-temperature (RT) detectors operating in the 3-5 and 8-14 mm wavelength devices due to its advantage of high electron mobility, faster response rate and high stability.…”