InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

Abstract

The growth of InAs x Sb 1Àx films on (1 0 0) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs 0.3 Sb 0.7 films with InAs 0.91 Sb 0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs 0.3 Sb 0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 Â 10 4 cm 2 V À1 s À1 and the carrier density is 2.78 Â 10 16 cm À3 at room temperature (RT). The InAs 0.3 Sb 0.7 films grown on (1 0 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mm. r

The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy

“…Recently the growth of InAs x Sb 1Àx ternary alloy has received great interesting for their infrared devices applications [1][2][3][4]. InAs x Sb 1Àx ternary alloy as devices are operating at wavelengths in the 3-5 and 8-12 mm windows where the atmospheric absorption is minimum [5][6][7][8].…”

Detailed balance evaluation of tandem thermophotovoltaic devices residing on 6.1Å Sb-based alloys

“…Following this scheme, if the GaSb lattice-matched InAs 0.91 Sb 0.09 alloy (E g ¼0.286 eV) is used, λ m can be further enlarged to 4.4 μm, for which the majority of the spectrum is utilizable. Indeed, besides as a high quality buffer layer to grow other lattice-mismatched compositions on GaSb substrates [24,25], InAs 0.91 Sb 0.09 has also been used to fabricate the photovoltaic mid-infrared detectors [26], making our proposal realistic. However, as pointed out above, the smaller E g usually gives rise to the larger thermalization losses, making the expecting high efficiency unrealistic.…”

LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate

“…InAs 1À x Sb x is a promising material used for infrared optoelectronic device, covering both the mid-infrared (3-5 mm) and the longwavelength infrared (8)(9)(10)(11)(12) mm) atmospheric windows. In order to reduce the non-radiation recombination defects and improve the electrical properties of optoelectronic devices, high quality InAs 1À x Sb x layers are often indispensable in the InSb-and InAs-based devices as the active region [1][2][3].…”

“…Unfortunately, high quality epilayer grown by LPE can only be obtained when the lattice mismatch between the epilayer and the substrate is very small (typically less than 1%). Thus, suitable substrates for LPE growth of InAs 1À x Sb x include only InAs, GaSb, and InSb [10][11][12][13][14][15][16]. On InAs or GaSb substrate, device-level InAs 1-x Sb x films directly grown by LPE were only obtained with xo0.12 for mid-infrared application and, on InSb substrate, it is x40.89 for long-wavelength infrared application [11][12][13][14][15][16].…”

“…The source materials were 6 N In, Sb, and pieces of undoped crystalline InAs wafers (n $ 10 16 cm À 3 at room temperature) instead of polycrystalline InAs as used in Refs. [10][11][12][13][14][15]. The substrates were one-side well-polished (1 0 0) InAs wafers that were nominally undoped and sized up to 12 Â 14 mm 2 .…”