Long-wavelength Ge x Si 1-x /Si heterojunction infrared detectors and focal-plane arrays

Tsaur, B. Y.; Chen, Chenson K.; Marino, Susanne A.

doi:10.1117/12.48764

Cited by 23 publications

(7 citation statements)

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“…Since then, several different types of internal photoemission detectors have been demonstrated. [29,37,38] Among the initial detector developments, the most important types were metal-semiconductor Schottky barrier IR detectors, such as PtSi/Si detectors [39] operating in 3-5 μm range; Ge x Si 1−x /Si detectors [40,41] developed for 8-14 μm or even longer wavelengths. The absorber/photoemitter "electrode" is a metal or a metal silicide in the Schottky barrier and silicide detectors respectively.…”

Section: Free-carrier Based Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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The interest in Infrared and Ultraviolet detectors has increased immensely due to the emergence of important applications over a wide range of activities. Detectors based on free carrier absorption known as Hetero-junction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors and variations of these heterojunction structures to be used as intervalence band detectors for a wide wavelength region are presented. Although this internal photoemission concept is valid for all semiconductor materials systems, using a well studied III-V system of GaAs/Al x Ga 1−x As to cover a wide wavelength range from UV to far-infrared (THz) is an important development in detector technology. Using the intervalence band (heavy hole, light hole and split off) transitions for high operating temperature detection of mid Infrared radiation is also discussed. A promising new way to extend the detection wavelength threshold beyond the standard threshold connected with the energy gap in a GaAs/Al x Ga 1−x As system is also presented. Superlattice detector technology, which is another promising detector architecture, can be optimized using both Type I and Type II heterostructures. Here the focus will be on Type II Strained Layer (T2SL) Superlattice detectors. T2SL Superlattices based on InAs/(In,GA)Sb have made significant improvements demonstrating focal plane arrays operating around 80K and with multiple band detection capability. A novel spectroscopic method to evaluate the band offsets of both heterojunction and superlattice detectors is also discussed.

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Section: Free-carrier Based Infrared Detectorsmentioning

confidence: 99%

Heterojunction and superlattice detectors for infrared to ultraviolet

Perera

2016

Progress in Quantum Electronics

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“…While some early attempts to develop SiGe IR detectors concentrated on potential LWIR applications [62,63], in this chapter we focus solely the development of devices for applications involving detection in the NIR band (up to ~1700 nm). The most straightforward method by which to adjust the cutoff wavelength of a SiGe photodetector in order to tune its range of response is to modify the Si 1-x Ge x alloy composition.…”

Section: Si 1-x Ge X Photodetector Design Parametersmentioning

confidence: 99%

SiGe Based Visible-NIR Photodetector Technology for Optoelectronic Applications

Sood¹,

Zeller²,

Richwine³

et al. 2015

Advances in Optical Fiber Technology: Fundamental Optical Phenomena and Applications

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“…Some of the earlier attempts in developing SiGe IR detectors focused on their LWIR applicationsby using internal photoemmision [52][53]. Renewed efforts are now developing these detectors for application in the NIR-SWIR band [54].…”

Section: Si 1-x Ge X (Sige) Detector Arraysmentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

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This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

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Long-wavelength Ge x Si 1-x /Si heterojunction infrared detectors and focal-plane arrays

Cited by 23 publications

References 0 publications

Heterojunction and superlattice detectors for infrared to ultraviolet

Heterojunction and superlattice detectors for infrared to ultraviolet

SiGe Based Visible-NIR Photodetector Technology for Optoelectronic Applications

Advances in Infrared Detector Array Technology

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