SiGe Based Visible-NIR Photodetector Technology for Optoelectronic Applications

Sood, Ashok K.; Zeller, John W.; Richwine, Robert A.; Puri, Harry Efstathiadis Yash R.; Haldar, Pradeep; Dhar, Nibir K.; Polla, Dennis L.

doi:10.5772/59065

Cited by 20 publications

(13 citation statements)

References 82 publications

(153 reference statements)

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“…SWIR detection has been combined on single SLS devices with both MWIR and LWIR detection capability to offer both active and passive multiband imaging [52]. SWIR detection applications include telecommunications, astronomical observation, remote sensing, spectroradiometry, spectrophotometry, and hostile mortar fire detection [53,55].…”

Section: Short-wavelength Infrared (Swir)mentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Section: Short-wavelength Infrared (Swir)mentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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“…Following the two-step growth of the Ge seed and intrinsic layers, upper n + regions were formed through ion implantation of phosphorus (P) into the underlying intrinsic layer. The basic steps comprising this process are described as follows: A layer of SiO 2 was deposited above the i-Ge layer, intended to isolate states at the interface between it and the signal carrying layers as well as reduce traps that could contribute to leakage current [20]. Circular windows were then opened in this oxide to the underlying i-Ge using reactive-ion etching (RIE), in which a thin 20 nm layer of screen oxide was deposited.…”

Section: Final Device Fabrication Stepsmentioning

confidence: 99%

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

Rouse¹,

Zeller²,

Efstathiadis³

et al. 2016

OPJ

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SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-in (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p + seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n + regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n + region doping concentrations has demonstrated low dark current levels (down to below 1 nA at −1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10 19 cm −3. C. Rouse et al.

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“…However, fabrication of devices using these materials can be complex and expensive [1]. Groups III-V materials also are not compatible with Complementary Metal Oxide Semiconductor (CMOS) manufacturing since they act as contaminates in silicon.…”

Section: Introductionmentioning

confidence: 99%

“…86018 202 Optics and Photonics Journal single fiber is over hundreds of Tb/s [2]. There are also many military applications, including biochemical threat detection, night vision and the ability to image hostile mortar fire and muzzle flash [1].…”

Section: Introductionmentioning

confidence: 99%

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Model Development of p-i-n Germanium Devices for Infrared Detection

Philippi¹,

Zeller²,

Dhar³

et al. 2018

OPJ

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Germanium offers many benefits over groups III-V materials when used for infrared detection. Most importantly, germanium is compatible with Complementary Metal Oxide Semiconductor (CMOS) manufacturing which allows for a low-cost, high-throughput device, and it does not require cooling, which many III-V devices do. With the deposition of germanium directly on silicon, there will be a thermally induced strain due to the difference in thermal expansion coefficients between the two materials. When a biaxial tensile strain is present, the direct bandgap of germanium is lowered to ~0.77 eV and is capable of absorbing longer wavelengths. We have used a two-step deposition process to create a strained germanium film in order to fabricate a photodetector device. Our device has a dark current of 1.35 nA and a photocurrent of 22.5 nA at 1570 nm wavelength. Next, we developed a model in order to compare theoretical results with experimental results. The results indicate that the model is in close agreement with our measured data, and we are therefore able to use it to model future devices.

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SiGe Based Visible-NIR Photodetector Technology for Optoelectronic Applications

Cited by 20 publications

References 82 publications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Development of Low Dark Current SiGe Near-Infrared PIN Photodetectors on 300 mm Silicon Wafers

Model Development of p-i-n Germanium Devices for Infrared Detection

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