Long-term relaxation of the surface conductivity of silicon

Jäntsch, O.

doi:10.1016/0039-6028(65)90040-3

Cited by 12 publications

(3 citation statements)

References 13 publications

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“…Therefore, although such a mechanism cannot be excluded thoroughly, its contribution to the gas response is limited. (iii) Generally, a conductance layer (or electrolyte layer) is found on multiple semiconductor surfaces. − The layer may arise from an adsorbed water layer with less than 1 nm thickness, in which the analyte molecules undergo electrolytic dissociation . Here, it is most likely to be an n-type surface conductivity because when NH 3 is adsorbed on the surface and contributes to the number of conductive ions, the surface conductivity increases (Figure b).…”

Section: Resultsmentioning

confidence: 99%

“…(iii) Generally, a conductance layer (or electrolyte layer) is found on multiple semiconductor surfaces. − The layer may arise from an adsorbed water layer with less than 1 nm thickness, in which the analyte molecules undergo electrolytic dissociation . Here, it is most likely to be an n-type surface conductivity because when NH 3 is adsorbed on the surface and contributes to the number of conductive ions, the surface conductivity increases (Figure b). But whatever the case, the interaction of the adsorbed gas molecules with the surface could be equivalent to that of a surface conductance layer.…”

Section: Resultsmentioning

confidence: 99%

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“Infinite Sensitivity” of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

Liu

Zhu

Sun

et al. 2018

ACS Appl. Mater. Interfaces

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The microstructured and hyperdoped silicon as a superior photoelectric and photovoltaic material is first studied as a gas-sensing material. The material is prepared by femtosecond-laser irradiation on selenium-coated silicon and then fabricated as a conductive gas sensor, targeting ammonia. At room temperature, the sensitivity, response time, repeatability, distinguishability, selectivity, and natural aging effect of the sensor have been systematically studied. Results show that such black silicon has good potential for application as an ammonia-sensing material. On the basis of its unique optoelectronic properties, an additional optical drive is proposed for the formation of an optical and electric dual-driven sensor, which is achieved by asymmetric light illumination between the two electrode regions. In a certain range of applied voltage, the sensitivity is enhanced dramatically and even tends to be infinite. For the aged device with degraded sensitivity, a two-order increment is obtained for 500 ppm of NH under the extra optical drive. A mechanism based on Dember effect is proposed for explaining such a phenomenon.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“Infinite Sensitivity” of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

Liu

Zhu

Sun

et al. 2018

ACS Appl. Mater. Interfaces

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show abstract

“…More detailed studies of the electronic interactions are needed to determine if the organic compounds affect the generation-recombination behavior of the real surface or if they result in carrier mobility behavior at the silicon surface significantly different from that inferred from studies on passivated surfaces. Manuscript submitted Nov. 4,1971; revised manuscript received March 20, 1972.…”

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An Effect of Organic Electron Donors and Acceptors on a Real Silicon Surface

Jackson¹,

Szedon²,

Temofonte³

1972

J. Electrochem. Soc.

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Semiconductor surface-state effects have received considerable attention in the past. From a practical point of view, electrical effects of such states can strongly influence and often limit the performance of semiconductor devices, e.g., by the formation of con-) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-03-10 to IP Vol. 119, No. 10 ORGANIC ELECTRON DONORS AND ACCEPTORS

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Velocity of water diffusion through germanium oxide

Balej

Koc

1968

Czech J Phys

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Long-term relaxation of the surface conductivity of silicon

Cited by 12 publications

References 13 publications

“Infinite Sensitivity” of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

“Infinite Sensitivity” of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives

An Effect of Organic Electron Donors and Acceptors on a Real Silicon Surface

Velocity of water diffusion through germanium oxide

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