An Effect of Organic Electron Donors and Acceptors on a Real Silicon Surface

Jackson, James H.; Szedon, J. R.; Temofonte, T. A.

doi:10.1149/1.2404009

Cited by 4 publications

(2 citation statements)

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“…Primary passivation in these devices is achieved by use of a silicate glass or an organic polymer coating. When an organic polymer is applied directly to a silicon surface, it must be recognized that real silicon surfaces contain a native SiO2 layer (9,135) on the order of 20,% thick. The exact nature of the processing prior to application of the polymer material and of the polymer itself (135,190) are significant factors in determining initial device properties, and also device stability.…”

Section: Sequence Of Application Of Dielectric Layersmentioning

confidence: 99%

“…In many cases a junction coat (layer of plastic such as an epoxy, silicone varnish, or room-temperature vulcanizing silicone elastomer) was applied prior to molding (84,97,121,311,165,2). Plastics can be a source of ions (182,128,230,228,29,166,177,308) or impurities (183,230,135,298,176) which adversely affect silicon devices, particularly in moist atmospheres and under bias conditions. In the last several years, a considerable number of process and materials changes has been made to improve the reliability of plastic-encapsulated silt,con integrated circuits (96,24,95,98,165,113).…”

Section: Device Encapsulationmentioning

confidence: 99%

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Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

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Section: Sequence Of Application Of Dielectric Layersmentioning

confidence: 99%