Long luminescent glass: Tb3+-activated ZnO–B2O–SiO2 glass

Yamazaki, Masaaki; Yamamoto, Yoshinori; Nagahama, Shinobu; Sawanobori, Naruhito; Mizuguchi, Masafumi; Hosono, Hideo

doi:10.1016/s0022-3093(98)00775-3

Cited by 60 publications

(37 citation statements)

References 6 publications

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“…Figure 8 illustrates the change in enthalpy and entropy of an AB system upon codoping with C. In the initial state, the Journal of the Ceramic Society of Japan 120 [11] 447-457 2012 B cannot dissolve in the matrix A because of the large ¦G mix . The formation of the solvation shell made of C on B decreases the enthalpy of the system, in which the large formation energy of AB complexes (in other words, dissolution energy of B into A) is replaced by the small formation energy of AC and BC complexes, whereas entropy remains almost unchanged.…”

Section: Mechanism Of Codoping Effectmentioning

confidence: 99%

“…9) The first one is a conventional route. The chemical compounds of transition metal, 10) rare earth (RE), 11) and halogen 12) are incorporated into the starting raw materials. On the other hand, positively charged atoms are inserted by ion implantation under a non-equilibrium condition; i.e., they are embedded in interstitial positions of the target materials.…”

Section: Introductionmentioning

confidence: 99%

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Doping effects in amorphous oxides

Funabiki

Kamiya

Hosono

2012

J. Ceram. Soc. Japan

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Impurity doping of crystalline Si is one of the most striking techniques in semiconductor technology. A rigid and perfect crystalline lattice is prerequisite for effective doping. However, it has been reported to date that introducing a small amount of impurities drastically improves also the properties of amorphous materials. This paper reviews three pronounced doping effects on optical and electrical properties of amorphous oxides; i.e., (i) F-doping of silica glass to improve the vacuum-ultraviolet optical transmission and radiation toughness, (ii) codoping effects on solubility enhancement of rare earth ions in silica glass melt, and (iii) electron-carrier generation in transparent amorphous oxide semiconductors. It is emphasized that effectiveness of electron doping is determined by the magnitude of electron affinity and stabilization energy of a dopant. Importance of the local structure formed around a dopant ion and the location of conduction band minimum measured from the vacuum level is addressed to understand the doping effects in amorphous oxides.

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Section: Mechanism Of Codoping Effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doping effects in amorphous oxides

Funabiki

Kamiya

Hosono

2012

J. Ceram. Soc. Japan

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“…In recent years, there has been increasing interest in the synthesis of long lasting phosphorescence glass [1][2][3][4][5]. Silicate glass is of special interest due to its improved properties, such as higher diaphaneity, better processibility, greater chemical stability, increased hardness, etc.…”

Section: Introductionmentioning

confidence: 99%

“…Silicate glass is of special interest due to its improved properties, such as higher diaphaneity, better processibility, greater chemical stability, increased hardness, etc. [4][5][6][7][8][9]. There are many methods to prepare glass materials, such as sol-gel method, solid-state reaction, microwave method, and hydrothermal synthesis.…”

Section: Introductionmentioning

confidence: 99%

“…Several researchers have used the solid-state method to prepare phosphorescence glass of zinc borosilicate [5][6][7][8][9], but the reaction temperature, which was required 1400°C above, was so high that a great deal of energy was expended, and the homogeneity degree of components was not better than the sol-gel method, which may produce negative effect to the phosphorescence property of materials, because of concentration quenching. Accordingly, the purpose of this study is to synthesize a Mn 2+ -doped zinc borosilicate (ZBSM) glass thin film by heat treating a gel film that was prepared by the sol-gel dip-coating method and attribute the characters of the luminescence property, traps distribution, and glass structure of ZBSM glass films.…”

Section: Introductionmentioning

confidence: 99%

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Sol-gel preparation and phosphorescence property of Mn2+-doped zinc borosilicate glass thin films

Li¹,

Zhang²,

Hou³

et al. 2011

Rare Metals

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Mn 2+ -doped zinc borosilicate (ZBSM) glass thin films were first synthesized by sol-gel method. In the experiment, a thin gel film was deposited onto quartz glass substrates by dip-coating method and then heat-treated to form a Mn 2+ -doped zinc borosilicate glass thin film. Long lasting phosphorescence (LLP) and photo-stimulated long lasting phosphorescence (PSLLP) were found in the film sample. According to fluorescence spectra, LLP emission spectra, and PSLLP emission spectra, both LLP and PSLLP emissions are attributed to the energy level transition of 4 E g → 4 A 1g from Mn 2+ . Both the phosphorescence intensity decay curves contain a fast decay component and another slow decay one. The thermoluminescence (TL) spectra show that the sample has two kinds of traps at least and their energy level values are about 0.8 eV and 1.02 eV, which could be estimated by the Randall and Willcins formula. The infrared absorption spectra (IR) consist of characteristic vibration bands of Si-O-Si, Si-O-Zn, B-O in [BO 3 ], B-O group, and Zn-O in [ZnO 4 ]. Moreover, image storage and logical operation of the ZBSM film were carried out successfully through an experiment analogues of optical storage.

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Persistent Luminescence Materials

Aitasalo¹,

Hölsä²,

Krupa³

et al. 2003

Physics of Laser Crystals

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Abstract. The luminescent efficiency of rare earth ions is usually drastically lowered when defects are present in the host lattice. Persistent luminescence is the most recent rare earth application based on lattice defects. Typical materials are the Eu + ions as codopants enhance greatly the duration and intensity of persistent luminescence. As a result of very slow thermal bleaching of the excitation energy from the lattice defects acting as traps, the new persistent luminescent materials yield luminescence still visible to naked eye for more than ten hours. Despite the seemingly simple stoichiometry and structure of these materials, the determination of persistent luminescence mechanism(s) presents a very complicated problem. This report~resents in detail some of the factors affecting the luminescence properties of the Eu +,R 3 + doped MAIz0 4 • The possible mechanisms involved with different defect centers and interactions between them and the emitting Eu 2 + ion are discussed based on the results of systematic investigations carried out on the preparation, composition, structure and different luminescence properties.

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Long luminescent glass: Tb3+-activated ZnO–B2O–SiO2 glass

Cited by 60 publications

References 6 publications

Doping effects in amorphous oxides

Doping effects in amorphous oxides

Sol-gel preparation and phosphorescence property of Mn2+-doped zinc borosilicate glass thin films

Persistent Luminescence Materials

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