Long duration high temperature storage test on GaN HEMTs

Vitobello, Fabio; Barnes, A.R.

doi:10.1109/irps.2012.6241781

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…Therefore, we believe that high-temperature storage also improves the quality of the metal-semiconductor contact in the device. After the device is manufactured, the contact between the metal and the semiconductor is not tight, as there is a gap of several nanometers [36,37], but after high-temperature storage, this gap is consumed, forming a tighter metal-semiconductor contact interface [35,38]. This results in a decrease in the trap density at the Schottky contact interface, counteracting the increase in the trap density due to dehydrogenation.…”

Section: Discussionmentioning

confidence: 99%

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

Zhou,

Liu,

Guo

et al. 2024

Micromachines

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In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impact of hydrogen on the devices. After hydrogen treatment, the output current and the maximum transconductance of the device increase, and the threshold voltage drifts negatively. However, after high-temperature treatment at 200 °C for 24 h, the output current, threshold voltage, and the maximum transconductance of the device all approach their initial values before hydrogen treatment. By using low-frequency noise analysis technology, the trap density of the hydrogen-treated AlGaN/GaN HEMT is determined to be 8.9 × 1023 cm−3·eV−1, while it changes to 4.46 × 1022 cm−3·eV−1 after high-temperature storage. We believe that the change in the electrical characteristics of the device in hydrogen is due to the passivation of hydrogen on the inherent trap of the device, and the variation in the electrical properties of the device in the process of high-temperature storage involves the influence of two effects, namely the dehydrogenation effect and the improvement of the metal–semiconductor interface caused by high temperatures.

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Section: Discussionmentioning

confidence: 99%

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

Zhou,

Liu,

Guo

et al. 2024

Micromachines

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“…authors, high electric-field and high junction-temperature are necessary in order to highlight typical failure mechanisms on robust GaN-HEMT technologies: junction temperature in the order of 300°C are often reported in long-term tests as the right values at which significant performance degradation becomes visible [6,8,9]. This observation has forced us to use such high levels of dissipated power (>30 W/mm) in order to reach the target temperature of 300°C, provided that no other failure mechanisms can be triggered by the high current or voltage levels, enabling the use of rather short stress tests for a preliminary but valuable assessment of device reliability and failure mechanisms.…”

Section: Discussionmentioning

confidence: 99%

“…For the most remarkable failure mode (2), many papers reports the strong effect in device performances given by the combined presence of high electric-field and high junction-temperature. Results in [6,8] point out the growth of pits and cracks extended all over the gate-drain edge region as the cause of the huge reduction of the channel performances without any leakage increase, while authors in [9,11] report that the Au interdiffusion in the Schottky contact produces the same effect in device performances even in pure thermal storage tests, together with the increase of the gate leakage. Even if all mentioned papers remark a significant degradation after long-term tests (more than 1000-h), the higher junction temperatures used in our tests can be the root cause of the pretty fast performance reduction obtained after only 24 h of stress.…”

Section: Discussionmentioning

confidence: 99%

Failure signatures on 0.25μm GaN HEMTs for high-power RF applications

Stocco

Dalcanale

Rampazzo

et al. 2014

Microelectronics Reliability

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“…The potential of AlGaN/GaN HEMT technology cannot be realized until the reliability aspect is probed and enhanced. As the majority of degradation phenomenon originates in the gate edge of these devices, modifications in the conventional gate geometry can be one of the alternatives to address this issue [19]- [22]. We postulate that mitigation of electric field at the gate edge can suppress degradation mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

2021

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Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field-plate is well known, its blending with gate-shaping leading to a more robust and reliable behaviour is described in this paper. It is observed that the threshold voltage and transconductance invariably remain constant for various combinations of gate-shaped and field plate placements. The threshold voltage for all the devices are found to be -5.8 V. The peak transconductance for the devices without field plate and with field plate is ∼ 0.16 S/mm and ∼ 0.15 S/mm, respectively. Apart from leakage current, the electric field also gets mitigated for both gate-shaped and field-plated devices by ∼ 45% and ∼ 68%, respectively. The moderation in electric field further assists in the reduction of electron temperature for gate-shaped and field-plated structures by ∼ 12% and ∼ 85%, respectively. Additionally, breakdown voltage increases for the gate-shaped devices to 133 V as compared to 120 V of conventional devices without field plate. Significant reduction in leakage current, electric field, and electron temperature is accompanied by a minor increment in capacitance for the field-plated structure, hence, the proposed structure is expected to enhance reliability of the device. Thus, it is anticipated that the proposed devices with enhanced reliability would be a step ahead of conventional devices and would find major applications in high power domain.INDEX TERMS Capacitance voltage (CV), electron temperature, GaN HEMT, gate shape, leakage current.

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Long duration high temperature storage test on GaN HEMTs

Cited by 4 publications

References 9 publications

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

Failure signatures on 0.25μm GaN HEMTs for high-power RF applications

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

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