Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors
Bin Zhou,
Chang Liu,
Chenrun Guo
et al.
Abstract:In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impact of hydrogen on the devices. After hydrogen treatment, the output current and the maximum transconductance of the device increase, and the threshold voltage drifts negatively. However, after high-temperature treat… Show more
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