Long and Short Range Ordering of CuInSe<sub>2</sub>

Chang, Chih-Hung; Wei, Su-Huai; Johnson, W. Travis; Bhattacharya, R. N.; Stanbery, B.J.; Anderson, Tim; Duran, Randy

doi:10.7567/jjaps.39s1.411

Cited by 7 publications

(5 citation statements)

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“…The lattice constants of CuInSe2 have been widely studied but the early results by Spiess and coworkers [38] are in excellent agreement with the most recent measurements of bond lengths by EXAFS [39]. Those values are a = 5.784 Å, c = 11.616 Å (and hence η = 1.004), dCu-Se = 2.484 Å, and dIn-Se = 2.586 Å.…”

Section: α α α α-Cis (Chalcopyrite Cuinse2)supporting

confidence: 69%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Section: α α α α-Cis (Chalcopyrite Cuinse2)supporting

confidence: 69%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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“…Contradicting results regarding the Cu-Se and In-Se bond lengths are also reported for EXAFS studies of Cu-In-Se compounds with Cu/III ratios below 0.80 such as Cu 2 In 4 Se 7 , CuIn 3 Se 5 and CuIn 5 Se 8 . While some authors observed an increase of the Cu-Se distance with decreasing Cu/III ratio [21,23,24] others found no change [25,26] or a pronounced decrease [27]. Similarly, both constant [24] and decreasing [23] In-Se distances were reported ) ratios determined from wavelength dispersive X-ray analysis (uncertainty ± 0.01) for the powder samples and from X-ray fluorescence analysis (uncertainty ± 0.08) for the thin film samples.…”

Section: Average Bond Lengthmentioning

confidence: 83%

Composition-dependent nanostructure of Cu(In,Ga)Se 2 powders and thin films

et al. 2015

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“…Deviations from the nominal Cu(In,Ga)Se 2 stoichiometric composition of α-phase and α + β-phase alloys to copper deficiency, where the ratio [Cu]/([In] + [Ga]), or CGI, is less than unity, are accommodated by the formation of large concentrations of point defects. The defects are predominately V Cu and group III Cu antisites, which were predicted [49] and subsequently proven [50] to associate and form the (In Cu + 2 V Cu ) cation NDC in pure CIS. These NDCs dramatically decrease the density of intragap states that these point defects otherwise create if not adjacent on the cation sublattice.…”

Section: Phase Chemistry Of Cigsmentioning

confidence: 92%

CIGS photovoltaics: reviewing an evolving paradigm

Stanbery¹,

Abou‐Ras²,

Yamada³

et al. 2021

J. Phys. D: Appl. Phys.

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Copper indium selenide chalcopyrite-structure alloys with gallium (CIGS) are unique among the highest performing photovoltaic (PV) semiconductor technologies. They are structurally disordered, nonstoichiometric materials that have been engineered to achieve remarkably low bulk nonradiative recombination levels. Nevertheless, their performance can be further improved. This review adopts a fundamental thermodynamic perspective to comparatively assess the root causes of present limitations on CIGS PV performance. The topics of selectivity and passivation of contacts to CIGS and its multinary alloys are covered, highlighting pathways to maximizing the electrochemical potential between those contacts under illumination. An overview of absorber growth methods and resulting properties is also provided. We recommend that CIGS researchers consider strategies that have been successfully implemented in the more mature wafer-based GaAs and Si PV device technologies, based on the paradigm of an idealized PV device design using an isotropic absorber with minimal nonradiative recombination, maximal light trapping, and both electron-selective and hole-selective passivated contacts. We foresee that CIGS technology will reach the 25% efficiency level within the next few years through enhanced collection and reduced recombination. To significantly impact power-generation applications, cost-effective, manufacturable solutions are also essential.

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Long and Short Range Ordering of CuInSe₂

Cited by 7 publications

References 0 publications

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Composition-dependent nanostructure of Cu(In,Ga)Se 2 powders and thin films

CIGS photovoltaics: reviewing an evolving paradigm

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Long and Short Range Ordering of CuInSe2

Cited by 7 publications

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Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Composition-dependent nanostructure of Cu(In,Ga)Se 2 powders and thin films

CIGS photovoltaics: reviewing an evolving paradigm

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Long and Short Range Ordering of CuInSe₂