Composition-dependent nanostructure of Cu(In,Ga)Se 2  powders and thin films

Schnohr, Claudia; Kämmer, H.; Steinbach, Tobias; Gnauck, M.; Rissom, T.; Kaufmann, Christian A.; Stephan, Christiane; Schorr, Susan

doi:10.1016/j.tsf.2014.10.078

Cited by 8 publications

(25 citation statements)

References 32 publications

(65 reference statements)

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“…Figure 41 plots the element-specific Cu-Se, Ga-Se, and In-Se bond lengths measured with EXAFS for CuIn x Ga 1Àx Se 2 as a function of composition x. 261,263 The values for the ternary parent compounds agree well with those listed in Table VIII obtained from diffraction measurements and with those reported for other EXAFS studies of CuGaSe 2 , 264 CuInSe 2 , [265][266][267] and CuIn x Ga 1Àx Se 2 . 35 Regarding the CuIn x Ga 1Àx Se 2 alloy, the Cu-Se bond length changes almost linearly between the values of the ternary parent compounds as expected from the VCA.…”

Section: A Atomic-scale Structuresupporting

confidence: 72%

“…41). 263 A similarly nonlinear behavior was also observed for the Ga-S and In-S bond lengths of CuIn x Ga 1Àx S 2 . 262 The amount of bond length relaxation in the dilute limit is thus nearly identical for zincblende and chalcopyrite semiconductor alloys.…”

Section: A Atomic-scale Structurementioning

confidence: 53%

“…Studies of the atomic-scale structure of quaternary chalcopyrite alloys using EXAFS were reported for CuIn x Ga 1Àx Se 2 35, [261][262][263] and CuIn x Ga 1Àx S 2 . 262 In these materials, each cation is bonded to four Se or S anions while each anion has two Cu and two group-III first nearest neighbors as shown in Figs.…”

Section: A Atomic-scale Structurementioning

confidence: 99%

“….41. Element-specific In-Se (blue triangles), Ga-Se (green circles), and Cu-Se (red squares) bond lengths as a function of composition x for CuIn x Ga 1-x Se 2 [261][262][263]. Full and open symbols correspond to powder samples and polycrystalline thin films, respectively.…”

mentioning

confidence: 99%

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Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Schnohr¹

2015

Applied Physics Reviews

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Compound semiconductor alloys such as InxGa1−xAs, GaAsxP1−x, or CuInxGa1−xSe2 are increasingly employed in numerous electronic, optoelectronic, and photonic devices due to the possibility of tuning their properties over a wide parameter range simply by adjusting the alloy composition. Interestingly, the material properties are also determined by the atomic-scale structure of the alloys on the subnanometer scale. These local atomic arrangements exhibit a striking deviation from the average crystallographic structure featuring different element-specific bond lengths, pronounced bond angle relaxation and severe atomic displacements. The latter, in particular, have a strong influence on the bandgap energy and give rise to a significant contribution to the experimentally observed bandgap bowing. This article therefore reviews experimental and theoretical studies of the atomic-scale structure of III-V and II-VI zincblende alloys and I-III-VI2 chalcopyrite alloys and explains the characteristic findings in terms of bond length and bond angle relaxation. Different approaches to describe and predict the bandgap bowing are presented and the correlation with local structural parameters is discussed in detail. The article further highlights both similarities and differences between the cubic zincblende alloys and the more complex chalcopyrite alloys and demonstrates that similar effects can also be expected for other tetrahedrally coordinated semiconductors of the adamantine structural family.

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Section: A Atomic-scale Structuresupporting

confidence: 72%

Section: A Atomic-scale Structurementioning

confidence: 53%

Section: A Atomic-scale Structurementioning

confidence: 99%

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confidence: 99%

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Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Schnohr¹

2015

Applied Physics Reviews

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“…This fact is the reason for the intrinsic p‐type conductivity of Cu(In,Ga)Se 2 , and also for the high mobilities of Cu ions and other cations in the crystal. In p‐type Cu(In,Ga)Se 2 applied for high‐efficient solar cells, the Cu vacancy

{normalV}_{Cu}^{-}

is considered the dominant acceptor, and the antisite defect

{In}_{Cu}^{2 +}

the main compensating donor . Further native donors and acceptors in Cu(In,Ga)Se 2 are

{Ga}_{Cu}^{2 +}

and

{normalV}_{Se}^{2 +}

(Se vacancy) as well as

{Cu}_{In}^{2 -}

and

{Cu}_{Ga}^{2 -} .

The presence of alkali and alkaline earth metals in the often‐used soda‐lime glass substrates as well as exposure to air can lead to impurity diffusion into the Cu(In,Ga)Se 2 structure.…”

Section: Structural Properties Of Cu(inga)se2 Thin Filmsmentioning

confidence: 99%

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells – a review

Abou‐Ras

Schmidt

Schäfer

et al. 2016

Physica Rapid Research Ltrs

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The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high‐efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep‐defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect‐free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two‐dimensional device simulations suggest that these defects are one origin of the reduced open‐circuit voltage of the photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Reversible correlation between subnanoscale structure and Cu content in co-evaporated Cu(In,Ga)Se2 thin films

et al. 2018

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Composition-dependent nanostructure of Cu(In,Ga)Se 2 powders and thin films

Cited by 8 publications

References 32 publications

Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells – a review

Reversible correlation between subnanoscale structure and Cu content in co-evaporated Cu(In,Ga)Se2 thin films

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Composition-dependent nanostructure of Cu(In,Ga)Se 2 powders and thin films

Cited by 8 publications

References 32 publications

Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells – a review

Reversible correlation between subnanoscale structure and Cu content in co-evaporated Cu(In,Ga)Se2 thin films

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Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells – a review