Localization, superconducting fluctuations, and superconductivity in thin films and narrow wires of aluminum

Santhanam, P.; Wind, Shalom J.; Prober, D. E.

doi:10.1103/physrevb.35.3188

Cited by 93 publications

(46 citation statements)

References 73 publications

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“…[13]) we were able to find a reasonable agreement between the SPM-measured and the resistance-calculated cross-section σ. Taking into consideration the concrete evolution of the shape of a nanostructure (e.g.…”

Section: Characterization Of Metallic Samplesmentioning

confidence: 48%

Ion beam shaping and downsizing of nanostructures

et al. 2008

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Abstract. We report a new approach for progressive and well-controlled downsizing of nanostructures below the 10 nm scale. Low energetic ion beam (Ar + ) is used for gentle surface erosion, progressively shrinking the dimensions with ~ 1 nm accuracy. The method enables shaping of nanostructure geometry and polishing the surface. The process is clean room / high vacuum compatible being suitable for various applications. Apart from technological advantages, the method enables study of various size phenomena on the same sample between sessions of ion beam treatment.

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Section: Characterization Of Metallic Samplesmentioning

confidence: 48%

Ion beam shaping and downsizing of nanostructures

et al. 2008

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“…5,[15][16][17][18][19][20][21]23,44,45 The singlet contribution, which is sensitive to L but not L S , gives rise to negative magnetoconductance around zero field. 17 In contrast, the triplet contributions depend on both L and L S and are responsible for positive magnetoconductance.…”

Section: Discussionmentioning

confidence: 99%

“…Antilocalization theory describes deviations from the classically predicted conductance G 0 as a consequence of interference between itinerant electrons on time-reversed trajectories. 5,[10][11][12][13][14][15][16][17][18][19][20][21][22][23] The magnitude of the antilocalization corrections depend on L S , on L , and on the applied magnetic field B. Thus quantitative information about both L S and L can be obtained from magnetotransport measurements.…”

Section: Introductionmentioning

confidence: 99%

“…Thus quantitative information about both L S and L can be obtained from magnetotransport measurements. 5,[10][11][12][13][14][15][16][17][18][19][20][21][22][23] Extensive experimental and theoretical research on antilocalization phenomena in thin films of metals [11][12][13] and semiconductors, [23][24][25] in 2DESs, [14][15][16][17][18][19][20][26][27][28][29][30][31][32] in hole systems, 22,33 and in narrow wires [7][8][9][34][35][36] demonstrate that these measurements form a valuable experimental tool for investigating spin and phase coherence in various material systems.…”

Section: Introductionmentioning

confidence: 99%

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Spin and phase coherence lengths inn-InSbquasi-one-dimensional wires

et al. 2010

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We present measurements of the magnetoconductance of quasi-one-dimensional wires fabricated on a twodimensional electron system in an InSb/InAlSb heterostructure. The width and temperature dependence of the spin and phase coherence lengths in the narrow wires are examined by analyzing the magnetoconductance in antilocalization theory, modified to account for ballistic transport. The experiments indicate that the confined geometry can enhance spin coherence lengths in systems not in the motional narrowing regime and in the presence of strong cubic Dresselhaus spin-orbit interaction. Experimentally, the spin coherence lengths are found to be inversely proportional to wire width and to display a weak temperature dependence. For all wire widths the phase coherence length, after correction for finite length effects, shows a temperature dependence indicative of phase decoherence via the one-dimensional Nyquist mechanism.

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“…During the past few decades, both theoretical [1][2][3][4] and experimental [5][6][7][8] investigations of the low temperature electrical conductivity of a weakly disordered electronic system have led to quantum corrections to the classical Boltzmann contribution. This work has been extended to high mobility two-dimensional electron gas ͑2DEG͒ systems during the last decade.…”

Section: Introductionmentioning

confidence: 99%

Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots

Pagnossin

Meikap

Quivy

et al. 2008

Journal of Applied Physics

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We report a comprehensive study of weak-localization and electron-electron interaction effects in a GaAs/InGaAs two-dimensional electron system with nearby InAs quantum dots, using measurements of the electrical conductivity with and without magnetic field. Although both the effects introduce temperature dependent corrections to the zero magnetic field conductivity at low temperatures, the magnetic field dependence of conductivity is dominated by the weak-localization correction. We observed that the electron dephasing scattering rate τφ−1, obtained from the magnetoconductivity data, is enhanced by introducing quantum dots in the structure, as expected, and obeys a linear dependence on the temperature and elastic mean free path, which is against the Fermi-liquid model.

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Localization, superconducting fluctuations, and superconductivity in thin films and narrow wires of aluminum

Cited by 93 publications

References 73 publications

Ion beam shaping and downsizing of nanostructures

Ion beam shaping and downsizing of nanostructures

Spin and phase coherence lengths inn-InSbquasi-one-dimensional wires

Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots

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