2008
DOI: 10.1088/0957-4484/19/05/055301
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Ion beam shaping and downsizing of nanostructures

Abstract: Abstract. We report a new approach for progressive and well-controlled downsizing of nanostructures below the 10 nm scale. Low energetic ion beam (Ar + ) is used for gentle surface erosion, progressively shrinking the dimensions with ~ 1 nm accuracy. The method enables shaping of nanostructure geometry and polishing the surface. The process is clean room / high vacuum compatible being suitable for various applications. Apart from technological advantages, the method enables study of various size phenomena on t… Show more

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Cited by 31 publications
(33 citation statements)
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“…1). In this work the method [21], [25] was applied to lithographically fabricated 99.999 % pure Al nanowires with initial cross-section of about 100 nm x 100 nm. During measurements the structures were immersed into a directly pumped 4 He bath with base temperature of about 0.95 K. Contrary to Refs.…”
Section: Methodsmentioning
confidence: 99%
“…1). In this work the method [21], [25] was applied to lithographically fabricated 99.999 % pure Al nanowires with initial cross-section of about 100 nm x 100 nm. During measurements the structures were immersed into a directly pumped 4 He bath with base temperature of about 0.95 K. Contrary to Refs.…”
Section: Methodsmentioning
confidence: 99%
“…Fabrication of metal NWs as narrow as 10 nm has been demonstrated to be possible using this approach. [561][562][563] These NWs are narrow enough that quantum fluctuations of the superconducting transition can directly be observed in them. 564 Moreover, the nature of the irradiating ion was shown to be significant in the thinning process.…”
Section: Ion Beam Synthesis Of Nwsmentioning
confidence: 99%
“…HighOhmic resistors (up to 10 M) or/and chains of Josephson junctions were used as on-chip high impedance elements (marked 'Z' in Fig.1) enabling current bias mode. Low energy directional ion milling was used to reduce the critical dimensions of the lift-off fabricated nanostructures down to sub-20 nm scales [17]. The capacitively coupled central Tshaped electrode was used as an electrostatic gate.…”
Section: Introductionmentioning
confidence: 99%