2010
DOI: 10.1103/physrevb.81.035335
|View full text |Cite
|
Sign up to set email alerts
|

Spin and phase coherence lengths inn-InSbquasi-one-dimensional wires

Abstract: We present measurements of the magnetoconductance of quasi-one-dimensional wires fabricated on a twodimensional electron system in an InSb/InAlSb heterostructure. The width and temperature dependence of the spin and phase coherence lengths in the narrow wires are examined by analyzing the magnetoconductance in antilocalization theory, modified to account for ballistic transport. The experiments indicate that the confined geometry can enhance spin coherence lengths in systems not in the motional narrowing regim… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

3
22
1

Year Published

2010
2010
2021
2021

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 29 publications
(26 citation statements)
references
References 59 publications
3
22
1
Order By: Relevance
“…To complete the picture, we note that BIA and SIA induced CPGE, SGE, and MPGE have been also observed in (001)-oriented InSb/(Al,In)Sb and HgTe/CdHgTe quantum well structures [65,[199][200][201][202]. These narrow band materials are of particular interest for spin physics because they are characterized by high mobility and small effective masses as well as by a very large g * -factor and spin-orbit splitting [203][204][205][206][207]. So far, while confirmed the band spin splitting, most of the studies have been aimed to the mechanisms of the current formation in these novel materials, which can now be extended by special studies aimed to SIA/BIA interplay.…”
Section: Interplay Of Bia and Sia In (001)- (110)- And (111)-grown mentioning
confidence: 99%
“…To complete the picture, we note that BIA and SIA induced CPGE, SGE, and MPGE have been also observed in (001)-oriented InSb/(Al,In)Sb and HgTe/CdHgTe quantum well structures [65,[199][200][201][202]. These narrow band materials are of particular interest for spin physics because they are characterized by high mobility and small effective masses as well as by a very large g * -factor and spin-orbit splitting [203][204][205][206][207]. So far, while confirmed the band spin splitting, most of the studies have been aimed to the mechanisms of the current formation in these novel materials, which can now be extended by special studies aimed to SIA/BIA interplay.…”
Section: Interplay Of Bia and Sia In (001)- (110)- And (111)-grown mentioning
confidence: 99%
“…Further, the weak antilocalization phenomenon in ρ near B = 0 can be used to determine SOI constants. Here, different model have been developed which help to evaluate experimental data only in specific parameter regimes [25][26][27][28][29][30]. The spin-Galvanic effect [31] was employed to extract the ratio and relative sign, but not the absolute values of R-SOI and D-SOI constants.…”
Section: Introductionmentioning
confidence: 99%
“…QDs in materials with strong spin-orbit interaction have important applications in the field of topological superconductivity. They can be used to realize Majorana zero modes in quantum dot chains 10 , and are essential elements for the readout and manipulation of topological qubits 11,12 .InSb is a promising material in this regard, with a high carrier mobility, large g-factor and strong spinorbit interaction [13][14][15][16] . QDs have been extensively studied in InSb nanowires [17][18][19] and, more recently, in InSb nanoflakes 20 .…”
mentioning
confidence: 99%
“…InSb is a promising material in this regard, with a high carrier mobility, large g-factor and strong spinorbit interaction [13][14][15][16] . QDs have been extensively studied in InSb nanowires [17][18][19] and, more recently, in InSb nanoflakes 20 .…”
mentioning
confidence: 99%