Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy

Abstract

Spatially resolved photoluminescence (PL) measurements have been performed on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors to determine the local temperature on both sides of the gate with spatial resolution of about 1 μm and temperature resolution better than 1 °C. This local temperature is deduced from the energy shift of one of the peaks in the PL spectra. Asymmetry in the temperature distribution between the drain and source sides is observed. The experimental temperature values have also been compared with predictions from an analytical model to determine the thermal resistance in these devices.

Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis

“…[4,5]) are able to measure only the surface temperature the device, while some other techniques (such as Refs. [7,8]) may be affected by carrier diffusion phenomena that tend to smear out the knowledge of temperature distribution. Some other (such as Ref [6]), are able to achieve an in-plane x-y accuracy slightly higher than our technique; however, this technique is based on the measure of the optical phonon frequency of the semiconductor layer accessed by the Ramal laser.…”

“…Commonly used techniques for the measurement of device temperature are: electrical DC method [3], IR techniques [4], liquid crystal techniques [5], Raman spectroscopy [6], cathodoluminescence [7], and photoluminescence spectroscopy [8]. Many of these methods do not allow the exact evaluation of the channel temperature, since some of these techniques (such as Refs.…”

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

“…Photoluminescence (PL) occurs when a system makes transition to a higher energy level by absorbing a photon and then spontaneously decays to a lower energy level, emitting a photon in the process. The PL spectra are wavelength and temperature dependent, enabling the determination of temper ature fields [17,18]. While tracing the edge emission, red-shifts of the PL spectrum in a thermally loaded device are interpreted as thermally induced E g (T ) shifts.…”