Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis

Cinà, Lucio; Carlo, Aldo Di; Reale, Andrea

doi:10.1016/j.microrel.2012.06.060

Cited by 4 publications

(1 citation statement)

References 10 publications

(11 reference statements)

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“…[1][2][3][4][5] Hence, it is necessary to perform an assessment of the selfheating effect and an accurate evaluation of the channel temperature in AlGaN/GaN HEMTs. Among means of determining the channel temperature in devices, [6][7][8][9][10] electrical methods have been widely used since their test procedures are simple, rapid and nondestructive. The key factor that limits the application of this kind of technique is the measurement accuracy.…”

Section: Introductionmentioning

confidence: 99%

Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement

Zhang

Zhu

et al. 2019

Jpn. J. Appl. Phys.

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This paper proposes an electrical method for the evaluation of self-heating in AlGaN/GaN HEMTs. The temperature dependence of the channel resistance has been extracted using double-pulsed measurements to extract the channel temperature under the gate region, and the influence of the pulse regime on the self-heating effect has been discussed. A two-dimensional electro-thermal model has been built, and it exhibits excellent agreement with experimental data. Compared with gate resistance thermometry, our method has the advantages of high accuracy, easy positioning and immunity to gate head geometry. This facilitates its application to temperature extraction especially in short channel devices. Finally, the scalability of the accuracy with device dimensions was illustrated to show the robustness of this method.

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