2012
DOI: 10.1016/j.microrel.2012.06.060
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Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis

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Cited by 4 publications
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“…[1][2][3][4][5] Hence, it is necessary to perform an assessment of the selfheating effect and an accurate evaluation of the channel temperature in AlGaN/GaN HEMTs. Among means of determining the channel temperature in devices, [6][7][8][9][10] electrical methods have been widely used since their test procedures are simple, rapid and nondestructive. The key factor that limits the application of this kind of technique is the measurement accuracy.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] Hence, it is necessary to perform an assessment of the selfheating effect and an accurate evaluation of the channel temperature in AlGaN/GaN HEMTs. Among means of determining the channel temperature in devices, [6][7][8][9][10] electrical methods have been widely used since their test procedures are simple, rapid and nondestructive. The key factor that limits the application of this kind of technique is the measurement accuracy.…”
Section: Introductionmentioning
confidence: 99%