Microscale Heat Conduction in Integrated Circuits and Their Constituent Films

Ju, Y. Sungtaek; Goodson, Kenneth E.

doi:10.1007/978-1-4615-5211-6

Cited by 32 publications

(32 citation statements)

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“…Many mechanisms can contribute to the change in reflectivity as a function of temperature [20,59], including changes in electron energy bands, increased transitions near the Fermi level at higher temperatures, and increased phonon-electron interactions at high temperatures, among others. In some materials, especially in metals and some semiconductors, the resulting change in optical reflectivity is linear with temperature.…”

Section: Principles and Technical Backgroundmentioning

confidence: 99%

“…The sensitivity of this change with temperature is quantified by the thermoreflectance coefficient, κ, which relates the change in reflectivity per unit change in temperature. Typically, κ is of order of 10 -4 -10 -6 K -1 and depends on the wavelength that is used to probe the surface [20][21][22][23].…”

Section: Principles and Technical Backgroundmentioning

confidence: 99%

“…While spatial resolution is limited by the diffraction limit of the optics involved in the detection scheme, the theoretical limit of the temporal resolution is determined by the order of the processes involved in the reflectance, which can be on the order of picoseconds in metals [20].…”

Section: Principles and Technical Backgroundmentioning

confidence: 99%

“…The sensitivity of this change with temperature is determined by the thermoreflectance coefficient, κ, which relates the change in reflectivity per unit change in temperature. Typically, κ is on the order of 10 -4 -10 -6 K -1 and depends on the wavelength that is used to probe the surface [20][21][22][23]. In addition to being a purely optical, non-invasive technique, thermoreflectance has the potential for providing micron-scale spatial resolution and subnanosecond temporal resolution [6,[24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

“…In addition to being a purely optical, non-invasive technique, thermoreflectance has the potential for providing micron-scale spatial resolution and subnanosecond temporal resolution [6,[24][25][26][27]. While spatial resolution is limited by the diffraction limit of the optics involved in the detection scheme, the theoretical limit of the temporal resolution is determined by the order of the processes involved in the reflectance, which can be on the order of picoseconds in metals [20]. The drawbacks to this technique are the challenging calibration of the thermoreflectance coefficient and potentially altered reflectance calibrations with deflection/deformation of the surface during the measurement.…”

Section: Introductionmentioning

confidence: 99%

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Noncontact surface thermometry for microsystems: LDRD final report.

Abel

Beecham

Graham

et al. 2006

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We describe a Laboratory Directed Research and Development (LDRD) effort to develop and apply laser-based thermometry diagnostics for obtaining spatially resolved temperature maps on working microelectromechanical systems (MEMS). The goal of the effort was to cultivate diagnostic approaches that could adequately resolve the extremely fine MEMS device features, required no modifications to MEMS device design, and which did not perturb the delicate operation of these extremely small devices. Two optical diagnostics were used in this study: microscale Raman spectroscopy and microscale thermoreflectance. Both methods use a low-energy, nonperturbing probe laser beam, whose arbitrary wavelength can be selected for a diffraction-limited focus that meets the need for micron-scale spatial resolution. Raman is exploited most frequently, as this technique provides a simple and unambiguous measure of the absolute device temperature for most any MEMS semiconductor or insulator material under steady state operation. Temperatures are obtained from the spectral position and width of readily isolated peaks in the measured Raman spectra with a maximum uncertainty near ±10 K and a spatial resolution of about 1 micron. Application of the Raman technique is demonstrated for V-shaped and flexure-style polycrystalline silicon electrothermal actuators, and for a GaN high-electron-mobility transistor. The potential of the Raman technique for simultaneous measurement of temperature and inplane stress in silicon MEMS is also demonstrated and future Raman-variant diagnostics for ultra spatiotemporal resolution probing are discussed. Microscale thermoreflectance has been developed as a complement for the primary Raman diagnostic. Thermoreflectance exploits the small-but-measurable temperature dependence of surface optical reflectivity for diagnostic purposes. The temperaturedependent reflectance behavior of bulk silicon, SUMMiT-V polycrystalline silicon films and metal surfaces is presented. The results for bulk silicon are applied to silicon-on-insulator (SOI) fabricated actuators, where measured temperatures with a maximum uncertainty near ±9 K, and 0.75-micron inplane spatial resolution, are achieved for the reflectance-based measurements. Reflectance-based temperatures are found to be in good agreement with Raman-measured temperatures from the same device. Constructive peer-reviews of this report were provided by Ed Piekos and Carlton Brooks. 4 ACKNOWLEDGEMENTS5

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Section: Principles and Technical Backgroundmentioning

confidence: 99%