Local cathodoluminescence and its capabilities for the study of band structure in solids

Spivak, G.V.; Петров, В. И.; Antoshin, M.K.

doi:10.3367/ufnr.0148.198604e.0689

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Cl-emission Formation1

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1988

2013

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Cited by 7 publications

(1 citation statement)

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“…With this estimation for real SEM accelerating voltages (10 to 30 kV) and many semiconducting materials ( L = 1 to 5 pm) a very poor spatial resolution must be expected, but in practice quite a h g h magnification has been obtained in experiments with local CL. This shows that (5) does not correspond to the real situation. In [13] a formal theory of the spatial resolution of local CL has been created on the basis of resolving two narrow luminescent layers in a nonluminescent matrix, and a special sample with a sharp boundary between luminescent and nonluminescent areas has been…”

Section: Cl-emission Formationmentioning

confidence: 89%

Cathodoluminescence Scanning Microscopy

Петров

1992

Phys. Stat. Sol. (a)

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Section: Cl-emission Formationmentioning

confidence: 89%

Cathodoluminescence Scanning Microscopy

Петров

1992

Phys. Stat. Sol. (a)

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Determination of the absorption coefficient and the internal luminescence spectrum of GaAs and GaAs1−xPx (x = 0.375, 0.78) from beam voltage dependent measurements of cathodoluminescence spectra in the scanning electron microscope

Hildebrandt

Schreiber

Hergert

et al. 1988

Phys. Stat. Sol. (a)

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On GaAs and GaAs1–xPx (x = 0.375, 0.78) samples the beam voltage dependence of the CL spectra and the EBIC signal are measured. From the analysis of the experimental data by fitting the theoretical voltage dependent CL signal using minority carrier diffusion length values derived from the EBIC measurements the optical absorption coefficient and the internal spectral distribution of the recombination radiation in the relevant wavelength region are obtained. The results for various semiconductor materials clearly demonstrate differences in the shape of the optical absorption edge in the wavelength regions investigated which correspond to observed shifts between the internal and the external spectral distribution of the recombination radiation.

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Possibilities of cathodoluminescence microanalysis of solids

Zamoryanskaya¹,

Vainshenker²

1988

J Appl Spectrosc

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Local cathodoluminescence and its capabilities for the study of band structure in solids

Cited by 7 publications

References 71 publications

Cathodoluminescence Scanning Microscopy

Cathodoluminescence Scanning Microscopy

Determination of the absorption coefficient and the internal luminescence spectrum of GaAs and GaAs1−xPx (x = 0.375, 0.78) from beam voltage dependent measurements of cathodoluminescence spectra in the scanning electron microscope

Possibilities of cathodoluminescence microanalysis of solids

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